Dependence of sensitivity of biosensor for carbon nanotube field-effect transistor with top-gate structures

Journal of Applied Physics

Volumn 107, Issue 8, 2010, Pages

  Abe, Masuhiro ^a,b   Murata, Katsuyuki ^b   Matsumoto, Kazuhiko ^a,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b OLYMPUS CORPORATION   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; DETECTING TARGET; EXPERIMENTAL INVESTIGATIONS; EXPERIMENTAL MEASUREMENTS; HIGH SENSITIVITY; INSULATING LAYERS; INSULATOR THICKNESS; RELATIVE PERMITTIVITY; STRUCTURAL CHARACTERISTICS; TOP-GATE;

CARBON NANOTUBES; FIELD EFFECT TRANSISTORS; FINITE ELEMENT METHOD; INSULATING MATERIALS; MESFET DEVICES; NANOSENSORS; PERMITTIVITY;

BIOSENSORS;

EID: 77952333004     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3298904     Document Type: Article

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