Thermal oxidation of a densely packed array of vertical Si nanowires

Journal of the Electrochemical Society

Volumn 159, Issue 3, 2012, Pages

  Kurstjens, R ^a,b   Vos, I ^a   Dross, F ^a   Poortmans, J ^a,b   Mertens, R ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC REACTIVE ION ETCHING; CORE DIAMETERS; DIAMETER REDUCTION; DUV LITHOGRAPHY; EFFECT OF TEMPERATURE; OXIDATION KINETICS; OXIDATION TEMPERATURE; PACKED ARRAYS; PROCESS SIMULATIONS; SI NANOWIRE; TANDEM SOLAR CELLS; TEMPERATURE OXIDATION; THERMAL OXIDATION; TWO-STEP OXIDATION PROCESS;

OXIDATION; SILICON;

NANOWIRES;

EID: 84857411060     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.088203jes     Document Type: Article

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