Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN

Journal of Applied Physics

Volumn 111, Issue 3, 2012, Pages

  Corfdir, P ^a,e   Dussaigne, A ^a   Teisseyre, H ^b,c   Suski, T ^c   Grzegory, I ^c   Lefebvre, P ^d   Giraud, E ^a   Ganiere J D ^a   Grandjean, N ^a   Deveaud Pledran B ^a  

^a EPFL   (Switzerland)

^b INSTITUTE OF PHYSICS   (Poland)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^d UNIVERSITÉ MONTPELLIER 2   (France)

^e UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; CHARGE CARRIER RECOMBINATION; DECAY TIME; EFFECTIVE LIFETIME; EMISSION INTENSITY; EMISSION LIFETIME; GAN CRYSTALS; HIGHER TEMPERATURES; LOW TEMPERATURES; NON-POLAR; NON-RADIATIVE; NON-RADIATIVE RECOMBINATIONS; RADIATIVE EFFICIENCY; SINGLE QUANTUM WELL; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THERMAL CARRIERS; TIME-RESOLVED PHOTOLUMINESCENCE;

CHARGE CARRIERS; EXCITONS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM;

EID: 84857379562     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3681816     Document Type: Article

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