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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 1894-1896

Carrier dynamics in non-polar GaN/AlGaN quantum wells intersected by basal-plane stacking faults

(5) Badcock, T J a Hammersley, S a Kappers, M J b Humphreys, C J b Dawson, P a

a UNIVERSITY OF MANCHESTER (United Kingdom)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

Carrier recombination; GaN AlGaN; Photoluminescence; Quantum wells; Stacking faults

Indexed keywords

A-PLANE GAN; BASAL PLANE STACKING FAULTS; CARRIER DYNAMICS; CARRIER RECOMBINATION; CARRIER TRANSFER PROCESS; DECAY TIME; EMISSION BANDS; EMISSION ENERGIES; EXCITON EMISSION; GAN TEMPLATE; GAN/ALGAN; GAN/ALGAN QUANTUM WELLS; NON-POLAR; NON-RADIATIVE; PHOTOLUMINESCENCE DECAY; QUANTUM WELL; QUANTUM WELL STRUCTURES; RECOMBINATION DYNAMICS;

GALLIUM ALLOYS; GALLIUM NITRIDE; PHOTOLUMINESCENCE; QUANTUM CHEMISTRY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

STACKING FAULTS;

EID: 77955778878 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200983574 Document Type: Conference Paper

Times cited : (4)

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