Functionality in single-molecule devices: Model calculations and applications of the inelastic electron tunneling signal in molecular junctions

Journal of Chemical Physics

Volumn 136, Issue 6, 2012, Pages

  Dash, L K ^a,b   Ness, H ^a,b   Verstraete, M J ^b   Godby, R W ^a,b  

^a UNIVERSITY OF YORK   (United Kingdom)

^b UNIVERSITY OF LIÈGE   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; CONJUGATED MOLECULES; ELECTRON-VIBRATION COUPLINGS; EXTERNAL ELECTRIC FIELD; GATE VOLTAGES; INELASTIC ELECTRON TUNNELING; INELASTIC ELECTRON TUNNELING SPECTRA; MODEL CALCULATIONS; MODEL SYSTEM; MOLECULAR JUNCTION; NANO-DEVICES; NON EQUILIBRIUM; NONLINEAR AMPLIFICATION; REALISTIC MODEL; SINGLE-MOLECULE DEVICES; SINGLE-MOLECULE JUNCTIONS; USEFUL PROPERTIES;

CALCULATIONS; ELECTRON TUNNELING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR JUNCTIONS; TRANSPORT PROPERTIES;

MOLECULES;

EID: 84857327502     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3684627     Document Type: Conference Paper

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