Hole mobilities and electrical characteristics of Ω - Gated silicon nanowire array FETs with <110> - and <100> -channel orientation

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 372-375

  Habicht, S ^a   Feste, S F ^a   Zhao, Q T ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL ORIENTATIONS; ELECTRICAL CHARACTERISTIC; ELECTRICAL CHARACTERIZATION; GATE LENGTH; ON-CURRENTS; SERIES RESISTANCES; SILICON NANOWIRE ARRAYS; SUBTHRESHOLD; TOP-DOWN APPROACH; VERTICAL ELECTRIC FIELDS;

ELECTRIC FIELDS; ELECTRIC WIRE; HOLE MOBILITY; MESFET DEVICES; NANOWIRES; SOLID STATE DEVICES;

DISPLAY DEVICES;

EID: 78649977258     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5618210     Document Type: Conference Paper

References (10)

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