Silicon nanowire Esaki diodes

Nano Letters

Volumn 12, Issue 2, 2012, Pages 699-703

  Schmid, Heinz ^a   Bessire, Cedric ^a   Björk, Mikael T ^a   Schenk, Andreas ^b   Riel, Heike ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

^b ETH ZURICH   (Switzerland)

Author keywords

diode; Esaki; Nanowire; phonon; silicon; strain; tunneling

Indexed keywords

CATALYST PARTICLES; CONDUCTANCE MEASUREMENT; CURRENT-VOLTAGE MEASUREMENTS; DEVICE PROPERTIES; ELECTRICAL MEASUREMENT; ESAKI; ESAKI DIODE; GROWTH DIRECTIONS; IMPURITY STATE; IN-SITU; LOW TEMPERATURES; N-TYPE DOPING; P-TYPE SI; PEAK CURRENT DENSITY; PEAK TO VALLEY CURRENT RATIO; PHONON PEAKS; REVERSE BIAS; SILICON NANOWIRES; STRAIN DEPENDENCE; STRAIN-DEPENDENT; TRANSVERSE OPTICAL PHONONS; TUNNEL BARRIER; TUNNEL CURRENTS; TUNNELING PROCESS; VAPOR-LIQUID-SOLID GROWTH;

DIODES; ELECTRON TUNNELING; NANOWIRES; PHONONS; STRAIN; TUNNEL DIODES;

SILICON;

GOLD; NANOWIRE; SILICON;

ARTICLE; CATALYSIS; CHEMISTRY; PARTICLE SIZE;

CATALYSIS; GOLD; NANOWIRES; PARTICLE SIZE; SILICON;

EID: 84856976438     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl2035964     Document Type: Article

References (23)

1. Esaki, L. Phys. Rev. 1958, 109, 603
2. Seabaugh, A.; Lake, R. Encyc. Appl. Phys. 1988, 22, 335
3. Franks, V. M.; Hulme, K. F.; Morgan, J. R. Solid-State Electron. 1965, 8, 343
4. Oehme, M.; Sarlija, M.; Hähnel, D.; Kaschel, M.; Werner, J.; Kasper, E.; Schulze, J. IEEE Trans. Electron Devices 2010, 57 (11) 2857
5. Komatsu, E.; Higuchi, Y.; Niina, T. Appl. Phys. Lett. 1967, 10 (2) 42
6. Schmid, H.; Björk, M. T.; Knoch, J.; Riel, H.; Riess, W.; Rice, P.; Topuria, T. J. Appl. Phys. 2008, 103, 024304
7. Sentaurus Device User Guide, version 2010.12; Synopsys Inc.: Mountain View, CA, 2010.
8. Schenk, A. Solid-State Electron. 1993, 36 (1) 19
9. Schenk, A.; Rhyner, R.; Luisier, M.; Bessire, C. Proceedings of International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan, September 8-10, 2011; IEEE: New York, 2011, 263-266.
10. Logan, R. A.; Chynoweth, A. G. Phys. Rev. 1963, 131 (1) 89
11. Nimmatoori, P.; Zhang, Q.; Dickey, E. C.; Redwing, J. M. Nanotechnology 2009, 20 (2) 025607
12. Schwödiauer, R.; Neugschwandtner, G. S.; Bauer-Gogonea, S.; Bauer, S.; Wirges, W. Appl. Phys. Lett. 1999, 75 (25) 3998
13. Chynoweth, A. G.; Feldmann, W. L.; Logan, R. A. Phys. Rev. 1961, 121 (3) 684
14. Reiteman, G.; Kasper, E. Appl. Phys. Lett. 2002, 80 (7) 1294
15. Esaki, L.; Miyahara, Y. Solid-State Electron. 1960, 1, 13.
16. Sze, S. M. Physics of Semiconductor Devices, 2nd ed.; Wiley: New York, 1981.
17. Smeys, P.; Griffin, P. B.; Rek, Z. U.; De Wolf, I.; Saraswat, K. C. IEEE Trans. Electron Devices 1999, 46 (6) 1245
18. Schenk, A. J. Appl. Phys. 1998, 84 (7) 3684
19. Solomon, M. O.; Jopling, J.; Frank, D. J.; D'Emic, C.; Dokumaci, O.; Ronsheim, P.; Haensch, W. E. J. Appl. Phys. 2004, 95 (10) 5800
20. Chynoweth, A. G.; Logan, R. A.; Thomas, D. E. Phys. Rev. 1962, 125 (3) 877-881
21. Yu, R.; Anisha, R.; Jin, N.; Chung, S.-Y.; Berger, P. R.; Gramila, T. J.; Thompson, P. E. J. Appl. Phys. 2009, 106, 034501
22. Sah, C. T. Phys. Rev. 1961, 123 (5) 1594
23. Streetman, B. G.; Sah, C. T. Proc. IEEE 1967, 55 (60) 1105