Selective doping of silicon nanowires by means of electron beam stimulated oxide etching

Nano Letters

Volumn 12, Issue 2, 2012, Pages 1096-1101

  Pennelli, G ^a   Totaro, M ^a   Piotto, M ^b  

^a UNIVERSITY OF PISA   (Italy)

^b CNR   (Italy)

Author keywords

e beam stimulated oxide etching; pn nanojunctions; selective doping; silicon nanowires

Indexed keywords

BORON DIFFUSIONS; DIRECT-PATTERNING; ELECTRICAL CONTACTS; EXPOSURE DOSE; HIGH DOSE; IV CHARACTERISTICS; LONGITUDINAL DIRECTION; N-DOPED; OXIDE ETCHING; P-N JUNCTION; PN NANOJUNCTIONS; SELECTIVE DOPING; SILICON NANOWIRES; TOPDOWN;

ELECTRON BEAMS; ETCHING; SILICA;

NANOWIRES;

NANOWIRE; SILICON; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; ELECTRON; INSTRUMENTATION; NANOTECHNOLOGY;

ELECTRONS; NANOTECHNOLOGY; NANOWIRES; SILICON; SILICON DIOXIDE;

EID: 84856972066     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl2045183     Document Type: Review

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