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Volumn , Issue , 2009, Pages 295-298

Metal nanojunctions on silicon single nanowire devices

Author keywords

Field effect device; Nanojunction; Silicon nanowire

Indexed keywords

DIRECT-PATTERNING; ELECTRICAL CHARACTERIZATION; FIELD-EFFECT DEVICES; METAL GATE; NANO SCALE; NANOJUNCTIONS; OXIDE ETCHING; ROOM TEMPERATURE; SILICON ANISOTROPIC ETCHING; SILICON DIOXIDE; SILICON NANOWIRES; SILICON-ON-INSULATOR SUBSTRATES; SINGLE NANOWIRES; THERMAL OXIDATION; TOP-DOWN PROCESS;

EID: 77951018613     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (1)

References (15)
  • 1
    • 33947103692 scopus 로고    scopus 로고
    • Funcional Nanowires
    • C. M. Lieber and Z. L. Wang, "Funcional Nanowires," MRS Bulletin, vol. 32, pp. 99-104, 2007.
    • (2007) MRS Bulletin , vol.32 , pp. 99-104
    • Lieber, C.M.1    Wang, Z.L.2
  • 2
    • 54849412269 scopus 로고    scopus 로고
    • Synthesis and Electrical and Mechanical Properties of Silicon and Germanium Nanowires
    • X. Wu, J. S. Kulkarni, G. Collins, N. Petkov, D. Almécija, J. J. Boland, et al. "Synthesis and Electrical and Mechanical Properties of Silicon and Germanium Nanowires," Chem. Mater., vol. 20, pp- 5954-5967, 2008.
    • (2008) Chem. Mater. , vol.20 , pp. 5954-5967
    • Wu, X.1    Kulkarni, J.S.2    Collins, G.3    Petkov, N.4    Almécija, D.5    Boland, J.J.6
  • 3
    • 66049115381 scopus 로고    scopus 로고
    • Roadmap for 22 nm and beyond
    • H. Iwai "Roadmap for 22 nm and beyond," Microelectronic Engineering, vol. 86, pp. 1520-1528, 2009.
    • (2009) Microelectronic Engineering , vol.86 , pp. 1520-1528
    • Iwai, H.1
  • 4
    • 0035902938 scopus 로고    scopus 로고
    • Nanowire Nanosensors for Highly Sensitive and SelectiveDetection of Biological andChemical Species
    • Y. Cui, Q. Wei, H. Park, and C. M. Lieber, "Nanowire Nanosensors for Highly Sensitive and SelectiveDetection of Biological andChemical Species," Science, vol. 293, pp. 1289-1292, 2001.
    • (2001) Science , vol.293 , pp. 1289-1292
    • Cui, Y.1    Wei, Q.2    Park, H.3    Lieber, C.M.4
  • 8
    • 63749115827 scopus 로고    scopus 로고
    • Detection of an uncharged steroid with a silicon nanowire field-effect transistor
    • K. S. Chang, C. C. Chen, J. T. Sheu, and Y.-K. Li, "Detection of an uncharged steroid with a silicon nanowire field-effect transistor," Sensors and Actuators B, vol. 138, pp. 148-153, 2009.
    • (2009) Sensors and Actuators B , vol.138 , pp. 148-153
    • Chang, K.S.1    Chen, C.C.2    Sheu, J.T.3    Li, Y.-K.4
  • 9
    • 33748880316 scopus 로고    scopus 로고
    • Fabrication and characterization of silicon nanowires with triangular cross section
    • G. Pennelli and M. Piotto, "Fabrication and characterization of silicon nanowires with triangular cross section" J. Appl. Phys., vol. 100, pp. 054507-9, 2006.
    • (2006) J. Appl. Phys. , vol.100 , pp. 054507-054509
    • Pennelli, G.1    Piotto, M.2
  • 10
    • 34249904124 scopus 로고    scopus 로고
    • Fabrication of Silicon Nanostructures by Geometry Controlled Oxidation
    • G. Pennelli and B. Pellegrini, "Fabrication of Silicon Nanostructures by Geometry Controlled Oxidation," J. Appl. Phys, vol. 101, pp. 104502-8, 2007.
    • (2007) J. Appl. Phys , vol.101 , pp. 104502-104508
    • Pennelli, G.1    Pellegrini, B.2
  • 11
    • 33646047145 scopus 로고    scopus 로고
    • Silicon single-electron transistor fabricated by anisotropic etch and oxidation
    • G. Pennelli, M. Piotto, and G. Barillaro, "Silicon single-electron transistor fabricated by anisotropic etch and oxidation," Microelectronic Engineering, vol.83, pp. 1710-1713, 2006.
    • (2006) Microelectronic Engineering , vol.83 , pp. 1710-1713
    • Pennelli, G.1    Piotto, M.2    Barillaro, G.3
  • 14
    • 0034316428 scopus 로고    scopus 로고
    • Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process
    • T. Tsutsumi, K. Ishii, H. Hiroshima, S. Hazra, M. Yamanaka, I. Sakata, et al. "Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process," J. Vac. Sci. Technol. B, vol.18, pp. 2640-2645, 2000.
    • (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 2640-2645
    • Tsutsumi, T.1    Ishii, K.2    Hiroshima, H.3    Hazra, S.4    Yamanaka, M.5    Sakata, I.6
  • 15
    • 41549110283 scopus 로고    scopus 로고
    • Fast, high bit number pattern generator for electron and ion beam lithographies
    • G. Pennelli "Fast, high bit number pattern generator for electron and ion beam lithographies," Rev. Sci. Instrum., vol.79, pp. 033902-33908, 2008.
    • (2008) Rev. Sci. Instrum. , vol.79 , pp. 33902-33908
    • Pennelli, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.