Top down fabrication of long silicon nanowire devices by means of lateral oxidation

Microelectronic Engineering

Volumn 86, Issue 11, 2009, Pages 2139-2143

  Pennelli, Giovanni ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

Electrical transport; Nanostructure fabrication; Silicon nanowire

Indexed keywords

COMPLEX STRUCTURE; ELECTRICAL CHARACTERISTIC; ELECTRICAL TRANSPORT; FLEXIBLE PLATFORMS; LARGE-SCALE PRODUCTION; MOS TECHNOLOGY; N-DOPED; NANOSTRUCTURE FABRICATION; SILICON ANISOTROPIC ETCHING; SILICON NANOWIRE; SILICON NANOWIRE DEVICE; SILICON NANOWIRE FETS; SILICON NANOWIRES; THREE-DIMENSIONAL DEVICES; TOP-DOWN FABRICATION;

ELECTRON BEAMS; FABRICATION; FIELD EFFECT TRANSISTORS; LITHOGRAPHY; MOS DEVICES; NANOWIRES; OXIDATION; SEMICONDUCTING SILICON;

ELECTRIC WIRE;

EID: 69549124164     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.02.032     Document Type: Article

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