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Volumn 22, Issue 1, 2009, Pages 293-304

Vertical channel thin film transistor technology: Similar approach with 3D-ULSI monolithic Technology

Author keywords

[No Author keywords available]

Indexed keywords

SUBSTRATES; THIN FILM TRANSISTORS; THIN FILMS; ULSI CIRCUITS;

EID: 84856894507     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3152986     Document Type: Conference Paper
Times cited : (3)

References (20)
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    • (2007) Electrochem. Soc Transactions , vol.8 , Issue.1 , pp. 51-56
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  • 4
    • 33947201126 scopus 로고    scopus 로고
    • Turning the world vertical: MOSFET with current flow perpendicular to the wafer surface
    • J. Moers, Turning the world vertical: MOSFET with current flow perpendicular to the wafer surface, Applied Physics A, 87, 531-537 (2007).
    • (2007) Applied Physics A , vol.87 , pp. 531-537
    • Moers, J.1
  • 6
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    • Reduction of Off-Current in Self-Aligned Double-Gate TFT with Mask-Free Symmetric LDD
    • Shengdong Zhang, Ruqi Han, Johnny K. O. Sin, and Mansun Chan, Reduction of Off-Current in Self-Aligned Double-Gate TFT With Mask-Free Symmetric LDD. IEEE Trans. on ED, 49, no 8, 1490-1492 (2002)
    • (2002) IEEE Trans. on ED , vol.49 , Issue.8 , pp. 1490-1492
    • Zhang, S.1    Han, R.2    Sin, J.K.O.3    Chan, M.4
  • 9
    • 33847703273 scopus 로고    scopus 로고
    • (22 co-authors) Inverted T channel FET (ITFET) - Fabrication and characteristics of vertical-horizontal, thin body, multi-gate, multi-orientation devices, ITFET SRAM bit-cell operation. A novel technology for 45nm and beyond CMOS
    • Mathew, et al. (22 co-authors) Inverted T channel FET (ITFET) - Fabrication and characteristics of vertical-horizontal, thin body, multi-gate, multi-orientation devices, ITFET SRAM bit-cell operation. A novel technology for 45nm and beyond CMOS. IEDM Technical Digest. IEEE International, 5 (5), 713 (2005)
    • (2005) IEDM Technical Digest. IEEE International , vol.5 , Issue.5 , pp. 713
    • Mathew1
  • 10
    • 33847248263 scopus 로고    scopus 로고
    • The ITFET: A Novel FinFET-Based hybrid device
    • W. Zhang, J.G. Fossum, L. Mathew, The ITFET: A Novel FinFET-Based hybrid device, IEEE Trans on ED, 53, no9, 2335-2343, (2006)
    • (2006) IEEE Trans on ED , vol.53 , Issue.9 , pp. 2335-2343
    • Zhang, W.1    Fossum, J.G.2    Mathew, L.3
  • 11
    • 84856928253 scopus 로고    scopus 로고
    • Can Three-Dimensional Devices Extend Moore's Law Beyond the 32 nm Technology Node?
    • Marius Orlowski and Andreas Wild, Can Three-Dimensional Devices Extend Moore's Law Beyond the 32 nm Technology Node? Electrochem. Soc Transactions, 3 (6), 1, (2006)
    • (2006) Electrochem. Soc Transactions , vol.3 , Issue.6 , pp. 1
    • Orlowski, M.1    Wild, A.2
  • 13
    • 0029359887 scopus 로고
    • Conduction behaviour of low temperature (≤ 600°C) Polysilicon TFT with an in-situ drain doping level
    • L. Pichon, F. Raoult, O. Bonnaud, H. Sehil, D. Briand, Conduction behaviour of low temperature (≤ 600°C) Polysilicon TFT with an in-situ drain doping level, Solid State Electronics, Vol 38, no8 (1995) pp 1515-1521
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  • 17
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    • Differential Amplifier Using Polysilicon TFTs Processed at Low Temperature to be Integrated with TFT Hall Sensor
    • 6-10 Nov.
    • Jacques, E.; Le Bihan, F.; Crand, S.; Brahim, T.M., Differential Amplifier Using Polysilicon TFTs Processed at Low Temperature to be Integrated with TFT Hall Sensor, IEEE Industrial Electronics, IECON 2006 Proceedings, 3193-3198, 6-10 Nov. 2006
    • (2006) IEEE Industrial Electronics, IECON 2006 Proceedings , pp. 3193-3198
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    • website
    • Corning Inc. website: www.corning.com (2009)
    • (2009)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.