SCOPUS 정보 검색 플랫폼

ECS Transactions

Volumn 16, Issue 9, 2009, Pages 165-170

A vertical Thin Film Transistor based on low temperature technology (T<600°C)

(4) Toure, H D a Gaillard, T a Coulon, N a Bonnaud, O a

a UNIVERSITÉ DE RENNES 1 (France)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; POLYSILICON; SUBSTRATES; TEMPERATURE; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE; VAPOR DEPOSITION;

AVERAGE CURRENTS; CHANNEL WIDTHS; DOPED POLYSILICON; GATE-LEAKAGE CURRENT; GLASS SUBSTRATES; LOW TEMPERATURE TECHNOLOGY; LOW- TEMPERATURE PROCESS; VERTICAL THIN-FILM TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 63149179321 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.2980546 Document Type: Conference Paper

Times cited : (13)

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