Aluminum catalyzed growth of silicon nanowires: Al atom location and the influence of silicon precursor pressure on the morphology

Journal of Crystal Growth

Volumn 341, Issue 1, 2012, Pages 12-18

  Kohen, David ^a   Cayron, Cyril ^a   De Vito, Eric ^a   Tileli, Vasiliki ^a   Faucherand, Pascal ^a   Morin, Christine ^a   Brioude, Arnaud ^b   Perraud, Simon ^a  

^a CEA GRENOBLE   (France)

^b UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

A1. Crystal structure; A1. Defects; A1. Nanostructures; A2. Single crystal growth; B1. Nanowire; B2. Semiconducting materials

Indexed keywords

AL-CONCENTRATION; AMORPHOUS SILICON LAYERS; AUGER SPECTROSCOPY; B2. SEMICONDUCTING MATERIALS; CRYSTALLINE DEFECTS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; ENERGY FORMATION; HIGH DENSITY; HIGH QUALITY; KEY PARAMETERS; LOWER DENSITY; METAL CATALYST; MONOCRYSTALLINE; SEGREGATION EFFECTS; SILICON NANOWIRES; SILICON PRECURSORS; SMOOTH SURFACE; STRUCTURAL QUALITIES;

ATOMS; CATALYSTS; CHEMICAL VAPOR DEPOSITION; CORE LEVELS; NANOWIRES; PARTIAL PRESSURE; SURFACE DEFECTS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

ALUMINUM;

EID: 84856594701     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.12.057     Document Type: Article

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