Al catalyzed growth of silicon nanowires and subsequent in situ dry etching of the catalyst for photovoltaic application

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 11, 2011, Pages 2676-2680

  Kohen, David ^a   Tileli, Vasiliki ^a   Cayron, Cyril ^a   Faucherand, Pascal ^a   Morin, Christine ^a   Dufourcq, Joël ^a   Noël, Sébastien ^a   Levis, Michel ^a   Brioude, Arnaud ^b   Perraud, Simon ^a  

^a CEA GRENOBLE   (France)

^b UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

catalyst dry etching; CVD; silicon nanowires; VLS

Indexed keywords

AL CATALYST; ALUMINUM ETCHING; CONTROLLED GROWTH; ENERGY DISPERSIVE X RAY SPECTROSCOPY; FABRICATION PROCESS; HCL GAS; IN-SITU; IN-VACUUM; PHOTOVOLTAIC APPLICATIONS; SI WAFER; SILICON NANOWIRES; TOTAL REFLECTANCE; VISIBLE LIGHT; VLS;

ALUMINUM; ALUMINUM COATINGS; CATALYSIS; CATALYSTS; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOWIRES; PLASMA ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

DRY ETCHING;

EID: 80155205659     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127072     Document Type: Article

References (16)

1. M. D. Kelzenberg, M. C. Putnam, D. B. Turner-Evans, N. S. Lewis, and, H. A. Atwater, Predicted efficiency of Si wire array solar cells, in: Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE, (IEEE, 2010), pp. 001948-001953.
2. B. M. Kayes, H. A. Atwater, and, N. S. Lewis, J. Appl. Phys. 97 (11), 114302 (2005).
3. J. Li, H. Yu, S. M. Wong, G. Zhang, X. Sun, P. G. Q. Lo, and, D. L. Kwong, Appl. Phys. Lett. 95 (3), 033102 (2009).
4. M. D. Kelzenberg, S. W. Boettcher, Ja. Petykiewicz, D. B. Turner-Evans, M. C. Putnam, E. L. Warren, J. M. Spurgeon, R. M. Briggs, N. S. Lewis, and, H. A. Atwater, Nature Mater. 9 (3), 239-244 (2010).
5. R. S. Wagner, and, W. C. Ellis, Appl. Phys. Lett. 4 (5), 89 (1964).
6. S. M. Sze, and, K. K. Ng, Physics of Semiconductor Devices (Wiley-Interscience, New Jersey, 2007).
7. Y. Wang, V. Schmidt, S. Senz, and, U. Gösele, Nature Nanotechnol. 1 (3), 186-189 (2006).
8. F. M. Ross, C. Y. Wen, S. Kodambaka, Ba. Wacaser, M. C. Reuter, and, E. A. Stach, Philos. Mag. 90 (20), 2807-2816 (2010).
9. Y. Ke, X. Weng, J. M. Redwing, C. M. Eichfeld, T. R. Swisher, S. E. Mohney, and, Y. M. Habib, Nano Lett. 9 (12), 4494-4499 (2009).
10. C. E. Kendrick, H. P. Yoon, Ya. Yuwen, G. D. Barber, H. Shen, T. E. Mallouk, E. C. Dickey, T. S. Mayer, and, J. M. Redwing, Appl. Phys. Lett. 97 (14), 143108 (2010).
11. C. M. Hessel, A. T. Heitsch, and, Ba. Korgel, Nano Lett. 10 (1), 176-180 (2010).
12. M. C. Putnam, M. A. Filler, B. M. Kayes, M. D. Kelzenberg, Y. Guan, N. S. Lewis, J. M. Eiler, and, H. A. Atwater, Nano Lett. 8 (10), 3109-3113 (2008).
13. M. M. Adachi, M. P. Anantram, and, K. S. Karim, Nano Lett. 10 (10), 4093-4098 (2010).
14. C. Bale, P. Chartrand, S. Degterov, G. Eriksson, K. Hack, R. B. Mahfoud, J. Melancon, A. D. Pelton, and, S. Petersen, Calphad Comput. Coupling Phase Diagrams Thermochem. 26 (2), 189-228 (2002).
15. V. Destefanis, J. M. Hartmann, S. Borel, and, D. Bensahel, Semicond. Sci. Technol. 23 (10), 105019 (2008).
16. G. S. Doerk, V. Radmilovic, and, R. Maboudian, Appl. Phys. Lett. 96 (12), 123117 (2010).