SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Journal of Crystal Growth

Volumn 321, Issue 1, 2011, Pages 151-156

Patterned growth of high aspect ratio silicon wire arrays at moderate temperature

(9) Morin, Christine a Kohen, David a Tileli, Vasiliki a Faucherand, Pascal a Levis, Michel a Brioude, Arnaud b Salem, Bassem c Baron, Thierry c Perraud, Simon a

a CEA GRENOBLE (France)

b UNIVERSITÉ CLAUDE BERNARD LYON 1 (France)

c Joseph Fourier University (France)

Author keywords

A1. Doping; A3. Vapor phase epitaxy; B2. Semiconducting silicon; B3. Solar cells

Indexed keywords

BORON COMPOUNDS; CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; SILICON WAFERS; WIRE;

HIGH ASPECT RATIO; HYDROGEN CHLORIDE; IN-SITU DOPING; MODERATE TEMPERATURE; PATTERN FIDELITY; PATTERNED GROWTH; SILICON WIRES; TWO-STEP PROCESS;

ASPECT RATIO;

EID: 79953245551 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.02.024 Document Type: Article

Times cited : (7)

References (20)

1
- 21144442707
- P. Yang MRS Bull. 30 2005 85
- (2005) MRS Bull. , vol.30 , pp. 85
- Yang, P.¹

2
- 70349843701
- R. Yan, D. Gargas, and P. Yang Nat. Photonics 3 2009 569
- (2009) Nat. Photonics , vol.3 , pp. 569
- Yan, R.¹ Gargas, D.² Yang, P.³

3
- 75649098165
- A.I. Hochbaum, and P. Yang Chem. Rev. 110 2010 527
- (2010) Chem. Rev. , vol.110 , pp. 527
- Hochbaum, A.I.¹ Yang, P.²

4
- 78650825626
- K.-Q. Peng, and S.-T. Lee Adv. Mater. 23 2011 198
- (2011) Adv. Mater. , vol.23 , pp. 198
- Peng, K.-Q.¹ Lee, S.-T.²

5
- 20544449654
- B.M. Kayes, H.A. Atwater, and N.S. Lewis J. Appl. Phys. 97 2005 114302
- (2005) J. Appl. Phys. , vol.97 , pp. 114302
- Kayes, B.M.¹ Atwater, H.A.² Lewis, N.S.³

6
- 74249091524
- S.W. Boettcher, J.M. Spurgeon, M.C. Putnam, E.L. Warren, D.B. Turner-Evans, M.D. Kelzenberg, J.R. Maiolo, H.A. Atwater, and N.S. Lewis Science 327 2010 185
- (2010) Science , vol.327 , pp. 185
- Boettcher, S.W.¹ Spurgeon, J.M.² Putnam, M.C.³ Warren, E.L.⁴ Turner-Evans, D.B.⁵ Kelzenberg, M.D.⁶ Maiolo, J.R.⁷ Atwater, H.A.⁸ Lewis, N.S.⁹

7
- 77249164255
- M.D. Kelzenberg, S.W. Boettcher, J.A. Petykiewicz, D.B. Turner-Evans, M.C. Putnam, E.L. Warren, J.M. Spurgeon, R.M. Briggs, N.S. Lewis, and H.A. Atwater Nat. Mater. 9 2010 239
- (2010) Nat. Mater. , vol.9 , pp. 239
- Kelzenberg, M.D.¹ Boettcher, S.W.² Petykiewicz, J.A.³ Turner-Evans, D.B.⁴ Putnam, M.C.⁵ Warren, E.L.⁶ Spurgeon, J.M.⁷ Briggs, R.M.⁸ Lewis, N.S.⁹ Atwater, H.A.¹⁰

8
- 77956283603
- M.C. Putnam, S.W. Boettcher, M.D. Kelzenberg, D.B. Turner-Evans, J.M. Spurgeon, E.L. Warren, R.M. Briggs, N.S. Lewis, and H.A. Atwater Energy Environ. Sci. 3 2010 1037
- (2010) Energy Environ. Sci. , vol.3 , pp. 1037
- Putnam, M.C.¹ Boettcher, S.W.² Kelzenberg, M.D.³ Turner-Evans, D.B.⁴ Spurgeon, J.M.⁵ Warren, E.L.⁶ Briggs, R.M.⁷ Lewis, N.S.⁸ Atwater, H.A.⁹

9
- 33751122778
- R.S. Wagner, and W.C. Ellis Appl. Phys. Lett. 4 1964 89
- (1964) Appl. Phys. Lett. , vol.4 , pp. 89
- Wagner, R.S.¹ Ellis, W.C.²

10
- 77956166916
- J. Li, H. Yu, S.M. Wong, X. Li, G. Zhang, P.G.Q. Lo, and D.L. Kwong Appl. Phys. Lett. 95 2009 243113
- (2009) Appl. Phys. Lett. , vol.95 , pp. 243113
- Li, J.¹ Yu, H.² Wong, S.M.³ Li, X.⁴ Zhang, G.⁵ Lo, P.G.Q.⁶ Kwong, D.L.⁷

11
- 34548497849
- B.M. Kayes, M.A. Filler, M.C. Putnam, M.D. Kelzenberg, N.S. Lewis, and H.A. Atwater Appl. Phys. Lett. 91 2007 103110
- (2007) Appl. Phys. Lett. , vol.91 , pp. 103110
- Kayes, B.M.¹ Filler, M.A.² Putnam, M.C.³ Kelzenberg, M.D.⁴ Lewis, N.S.⁵ Atwater, H.A.⁶

12
- 79953246373
- S. Krylyuk, A. Davydov, and I. Levin ACS Nano 5 2011 656
- (2011) ACS Nano , vol.5 , pp. 656
- Krylyuk, S.¹ Davydov, A.² Levin, I.³

13
- 38849106165
- H. Schmid, M.T. Björk, J. Knoch, H. Riel, W. Riess, P. Rice, and T. Topuria J. Appl. Phys. 103 2008 024304
- (2008) J. Appl. Phys. , vol.103 , pp. 024304
- Schmid, H.¹ Björk, M.T.² Knoch, J.³ Riel, H.⁴ Riess, W.⁵ Rice, P.⁶ Topuria, T.⁷

14
- 0027542263
- M.R. Goulding Mater. Sci. Eng. B 17 1993 47
- (1993) Mater. Sci. Eng. B , vol.17 , pp. 47
- Goulding, M.R.¹

15
- 70449747826
- F. Oehler, P. Gentile, T. Baron, and P. Ferret Nanotechnology 20 2009 475307
- (2009) Nanotechnology , vol.20 , pp. 475307
- Oehler, F.¹ Gentile, P.² Baron, T.³ Ferret, P.⁴

16
- 67649946009
- F. Li, P.D. Nellist, and D.J.H. Cockayne Appl. Phys. Lett. 94 2009 263111
- (2009) Appl. Phys. Lett. , vol.94 , pp. 263111
- Li, F.¹ Nellist, P.D.² Cockayne, D.J.H.³

17
- 0000242140
- F. Cerdeira, T.A. Fjeldly, and M. Cardona Phys. Rev. B 8 1973 4734
- (1973) Phys. Rev. B , vol.8 , pp. 4734
- Cerdeira, F.¹ Fjeldly, T.A.² Cardona, M.³

18
- 0000485093
- M. Chandrasekhar, H. Chandrasekhar, M. Grimsditch, and M. Cardona Phys. Rev. B 22 1980 4825
- (1980) Phys. Rev. B , vol.22 , pp. 4825
- Chandrasekhar, M.¹ Chandrasekhar, H.² Grimsditch, M.³ Cardona, M.⁴

19
- 56249095469
- A. Brioude, D. Cornu, P. Miele, C. Mouchet, J.-P. Simonato, and E. Rouvière Appl. Phys. Lett. 93 2008 193105
- (2008) Appl. Phys. Lett. , vol.93 , pp. 193105
- Brioude, A.¹ Cornu, D.² Miele, P.³ Mouchet, C.⁴ Simonato, J.-P.⁵ Rouvière, E.⁶

20
- 0004126187
- 2nd edition Wiley New York
- S.M. Sze Semiconductor Devices 2nd edition 2002 Wiley New York
- (2002) Semiconductor Devices
- Sze, S.M.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.