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Volumn 100, Issue 4, 2012, Pages

Improved electron field emission from morphologically disordered monolayer graphene

(8) Pandey, Srikrishna a Rai, Padmnabh a,b Patole, Shashikant c Gunes, Fethullah c Kwon, Gi Duk a Yoo, Ji Beom c Nikolaev, Pavel a Arepalli, Sivaram a

a Sungkyunkwan University (South Korea)

b UNIVERSITÉ DE BOURGOGNE (France)

c Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; ATOMIC SCALE; COPPER FOILS; DOPED SILICON; ELECTRON FIELD EMISSION; ENHANCEMENT FACTOR; FIELD ELECTRON EMISSIONS; MAXIMUM CURRENT DENSITY; PLANAR GRAPHENE; THERMAL CHEMICAL VAPOR DEPOSITION; TURN-ON FIELD;

CHEMICAL VAPOR DEPOSITION; ELECTRON EMISSION; MONOLAYERS;

GRAPHENE;

EID: 84856449287 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3679135 Document Type: Article

Times cited : (55)

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