Electrical characteristics of Top-Down ZnO nanowire transistors using remote plasma ALD

IEEE Electron Device Letters

Volumn 33, Issue 2, 2012, Pages 203-205

  Sultan, S M ^a   Sun, K ^a   Clark, O D ^a   Masaud, T B ^a   Fang, Q ^b   Gunn, R ^b   Partridge, J ^c   Allen, M W ^c   Ashburn, P ^a   Chong, H M H ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b OXFORD INSTRUMENTS PLASMA TECHNOLOGY   (United Kingdom)

^c UNIVERSITY OF CANTERBURY   (New Zealand)

Author keywords

Atomic layer deposition (ALD); field effect transistor (FET); nanowire; remote plasma; top down fabrication; ZnO

Indexed keywords

ANISOTROPIC DRY ETCHING; CHANNEL LENGTH; ELECTRICAL CHARACTERISTIC; HIGH-VOLTAGE OPERATION; REMOTE PLASMAS; TOP-DOWN FABRICATION; TOPDOWN; ZNO; ZNO NANOWIRES;

ATOMIC LAYER DEPOSITION; DRAIN CURRENT; FABRICATION; HETEROJUNCTION BIPOLAR TRANSISTORS; MESFET DEVICES; PLASMA DEPOSITION; PLASMAS; SILICON COMPOUNDS; ZINC OXIDE;

NANOWIRES;

EID: 84856289524     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2174607     Document Type: Article

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