Effect of annealing temperature on the quality of Al-doped ZnO thin films prepared by sol-gel method

Journal of Sol-Gel Science and Technology

Volumn 61, Issue 1, 2012, Pages 249-257

  Lai, Chi Ming ^a   Lin, Keh Moh ^b   Rosmaidah, Stella ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Al ZnO (AZO) thin film; Rapid thermal annealing (RTA); Residual stress; Sol gel; XRD

Indexed keywords

AL-DOPED ZNO; ANNEALING PROCESS; ANNEALING TEMPERATURES; AZO THIN FILMS; COMPRESSIVE AND TENSILE STRESS; GRAIN SIZE; SHEAR STRESS COMPONENT; THERMAL EXPANSION COEFFICIENTS; XRD; YOUNG'S MODULUS; ZNO;

ALUMINUM; GELS; LATTICE MISMATCH; MECHANICAL PROPERTIES; OPTICAL PROPERTIES; RAPID THERMAL ANNEALING; RESIDUAL STRESSES; SOL-GEL PROCESS; SOL-GELS; SOLS; THERMAL EXPANSION; THIN FILMS; ZINC OXIDE;

FILM PREPARATION;

EID: 84856209771     PISSN: 09280707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10971-011-2621-6     Document Type: Article

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