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Volumn 9, Issue 2, 2012, Pages 259-261

Room temperature photoluminescence intensity enhancement in GaAs 1-xBi x alloys

Author keywords

Bismuth semiconductor; GaAsBi; MBE; Photoluminescence

Indexed keywords

CARRIER CONFINEMENTS; CRYSTAL QUALITIES; GAAS; GAASBI; PEAK WAVELENGTH; PL INTENSITY; ROOM TEMPERATURE; ROOM-TEMPERATURE PHOTOLUMINESCENCE;

BISMUTH; CERIUM ALLOYS; ENERGY GAP; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE;

SEMICONDUCTING GALLIUM;

EID: 84856156358 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.201100256 Document Type: Article

Times cited : (11)

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