Comparative study on nano-scale III-V MOSFETs with various channel materials using quantum-corrected Monte Carlo simulation

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 2, 2012, Pages 346-349

  Homma, Takahiro ^a   Hasegawa, Kei ^a   Watanabe, Hisanao ^a   Hara, Shinsuke ^a   Fujishiro, Hiroki I ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

GaAs; III V MOSFET; InGaAs; InP; Quantum corrected Monte Carlo simulation; Quasi ballistic transport

Indexed keywords

GAAS; III-V MOSFET; INGAAS; INP; QUANTUM-CORRECTED MONTE CARLO SIMULATION; QUASI-BALLISTIC TRANSPORT;

BALLISTICS; COMPUTER SIMULATION; DRAIN CURRENT; ELECTRONS; GALLIUM ARSENIDE; LANDFORMS; MOSFET DEVICES; NANOTECHNOLOGY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM;

MONTE CARLO METHODS;

EID: 84856139666     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100275     Document Type: Article

References (13)

1. D. A. Antoniadis et al., IBM J. Res. Dev. 50, 363 (2006).
2. D.-H. Kim et al., IEEE Trans. Electron Devices 55, 2546 (2008).
3. H. I. Fujishiro et al., Phys. Status Solidi C 5, 2795 (2008).
4. H. Tsuchiya et al., IEEE Electron Device Lett. 31, 365 (2010).
5. R. Yamada et al., Phys. Status Solidi C 6, 1403 (2009).
6. T. Takegishi et al., Proc. IPRM (2009), p. 124.
7. H. Watanabe et al., Phys. Status Solidi C 8, 306 (2011).
8. H. I. Fujishiro et al., Proc. ICSICT (2010), p. 1350.
9. M. J. W. Rodwell et al., Proc. IPRM (2010), p. 25.
10. T. Takegishi et al., IEICE Trans. Electron. E 93-C, 1258 (2010).
11. K. Natori, IEICE Trans. Electron. E 84-C, 1029 (2001).
12. H. Tsuchiya et al., IEEE Trans. Electron Devices 53, 2965 (2006).
13. K. Natori, IEEE Electron Device Lett. 23, 655 (2002).