Quantum-corrected Monte Carlo study of quasi-ballistic transport in nano-scale InGaAs HEMTs

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 6, 2009, Pages 1403-1407

  Yamada, Ryohei ^a   Takegishi, Takayuki ^a   Hirata, Yuko ^a   Matsumoto, Takayuki ^a   Hara, Shinsuke ^a   Fujishiro, Hiroki I ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING COEFFICIENTS; BALLISTIC LIMIT; BALLISTICITY; ELECTRON TRANSPORT; ELECTRON VELOCITY; MOMENTUM DISTRIBUTION FUNCTION; MONTE CARLO STUDY; MOSFETS; NANO SCALE; QUASI-BALLISTIC TRANSPORT;

BACKSCATTERING; DISTRIBUTION FUNCTIONS; ELECTRONS; HIGH ELECTRON MOBILITY TRANSISTORS; QUANTUM CHEMISTRY; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; STATISTICAL MECHANICS; TRANSPORT PROPERTIES;

BALLISTICS;

EID: 70349410556     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200881517     Document Type: Conference Paper

References (11)

1. D. A. Antoniadis et al., IBM J. Res. & Dev. 50, 363 (2006).
2. D.-H. Kim and J. A. del Alamo, in: IEEE IEDM Tech. Dig., 2006, pp. 837-840.
3. D.-H. Kim and J. A. del Alamo, IEEE Electron Device Lett. 29, 830 (2008).
4. H. I. Fujishiro, T. Kawabata, and J. A. del Alamo, Phys. Status Solidi C 5(9), 2795 (2008).
5. D. K. Ferry, Superlattices Microstruct. 28, 419 (2000).
6. M. V. Fischetti and S. E. Laux, Phys. Rev. B 38, 9721 (1988).
7. J. Mateos, T. González, D. Pardo, V. Hoel, H. Happy, and A. Cappy, IEEE Electron Device Lett. 47, 250 (2000).
8. M. Lundstrom, IEEE Electron Device Lett. 18, 361 (1997).
9. K. Natri, IEICE Trans. Electron. E 84-C, 1029 (2001).
10. K. Natori, T. Shimizu, and T. Ikenobe, Jpn. J. Appl. Phys. 42, 2063 (2003).
11. H. Tsuchiya, K. Fujii, T. Mori, and T. Miyoshi, IEEE Trans. Electron Devices 53, 2965 (2006).