Quantum-corrected Monte Carlo study of nano-scale InGaAs MOSFETs

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 2, 2011, Pages 306-309

  Watanabe, Hisanao ^a   Homma, Takahiro ^a   Takegishi, Takayuki ^a   Hirasawa, Yuki ^a   Hirata, Yuko ^a   Hara, Shinsuke ^a   Fujishiro, Hiroki I ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Backscattering; InGaAs; Monte Carlo simulation; MOSFET; Quantum corrected; Quasi ballistic transport

Indexed keywords

INGAAS; MONTE CARLO SIMULATION; MOS-FET; QUANTUM-CORRECTED; QUASI-BALLISTIC TRANSPORT;

BACKSCATTERING; BALLISTICS; COMPUTER SIMULATION; ELECTRONS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; QUANTUM CHEMISTRY; SEMICONDUCTING INDIUM; TRANSPORT PROPERTIES;

MONTE CARLO METHODS;

EID: 79951705414     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000491     Document Type: Article

References (11)

1. D.-H. Kim et al., IEEE Trans. Electron Devices 55, 2546 (2008).
2. H. I. Fujishiro et al., Phys. Status Solidi C 5, 2795 (2008).
3. U. Singisetti et al., IEEE Electron Device Lett. 30, 1128 (2009).
4. H. Tsuchiya et al., IEEE Electron Device Lett. 31, 365 (2010).
5. R. Yamada et al., Phys. Status Solidi C 6, 1403 (2009).
6. D. K. Ferry, Superlattices Microstruct. 28, 419 (2000).
7. M. V. Fischettiet et al., Phys. Rev. B 38, 9721 (1988).
8. K. Natori, IEICE Trans. Electron. E 84-C, 1029 (2001).
9. H. Tsuchiya et al., IEEE Trans. Electron Devices 53, 2965 (2006).
10. T. Takegishi et al., in: Proc. IPRM, 2009, p. 124.
11. K. Natori, IEEE Electron Device Lett. 23, 655 (2002).