First principles study of phosphorus and boron substitutional defects in Si-XII

Journal of Physics Condensed Matter

Volumn 24, Issue 5, 2012, Pages

  Malone, Brad D ^a,b   Cohen, Marvin L ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SITES; CHARGE STATE; EXPERIMENTAL DATA; FIRST-PRINCIPLES STUDY; FORMATION ENERGIES; NANOINDENTATION EXPERIMENTS; P-TYPE; ROOM TEMPERATURE; SUBSTITUTIONAL DEFECTS; TRANSITION LEVEL;

BORON; NANOINDENTATION; PHOSPHORUS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

CRYSTAL DEFECTS;

BORON; PHOSPHORUS; SILICON;

ARTICLE; CHEMISTRY; CONFORMATION; METHODOLOGY; NANOTECHNOLOGY; PHYSICAL CHEMISTRY; SEMICONDUCTOR; STATIC ELECTRICITY; STATISTICAL MODEL; THERMODYNAMICS;

BORON; CHEMISTRY, PHYSICAL; MODELS, STATISTICAL; MOLECULAR CONFORMATION; NANOTECHNOLOGY; PHOSPHORUS; SEMICONDUCTORS; SILICON; STATIC ELECTRICITY; THERMODYNAMICS;

EID: 84856101929     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/24/5/055505     Document Type: Article

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