Modeling of some electrical parameters of a MOSFET under applied uniaxial stress

Journal of Computational Electronics

Volumn 10, Issue 4, 2011, Pages 437-442

  Chaudhry, Amit ^a   Sangwan, Sonu ^a   Roy, Jatindra Nath ^b  

^a PANJAB UNIVERSITY   (India)

^b Solar Semiconductor Private Limited   (India)

Author keywords

Experimental; Mobility; Model; Strained Si

Indexed keywords

BULK MOBILITY; CAP LAYERS; ELECTRICAL PARAMETER; EXPERIMENTAL; FLAT-BAND VOLTAGE; INVERSION CHARGE DENSITY; MOS-FET; SEMI-ANALYTICAL MODEL; SHARP INCREASE; STRAINED-SI; SURFACE ELECTRICAL FIELDS; THREE COMPONENT; UNI-AXIAL STRAINS; UNIAXIAL STRESS; VERTICAL ELECTRICAL FIELDS;

CARRIER MOBILITY; CHARGE DENSITY; ELECTRON MOBILITY; ENERGY GAP; MATHEMATICAL MODELS; MODELS; SILICON NITRIDE; SOLIDS; SURFACE ROUGHNESS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 84855959935     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-011-0378-3     Document Type: Article

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