Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance

Applied Physics Letters

Volumn 100, Issue 2, 2012, Pages

  Jock, R M ^a   Shankar, S ^a,c   Tyryshkin, A M ^a   He, Jianhua ^a   Eng, K ^b,d   Childs, K D ^b   Tracy, L A ^b   Lilly, M P ^b   Carroll, M S ^b   Lyon, S A ^a  

^a Princeton University   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c Yale University   (United States)

^d Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DENSITIES; ELECTRON TRAPPING; INTERFACE QUALITY; LOW TEMPERATURES; METAL OXIDE SEMICONDUCTOR; MOBILITY MEASUREMENTS; PEAK MOBILITY; QUANTITATIVE EVALUATION; TRAPPED CHARGE;

DIELECTRIC DEVICES; ELECTRONS; ELECTROSPINNING; MAGNETIC MOMENTS; MOS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SPIN DYNAMICS;

ELECTRON SPIN RESONANCE SPECTROSCOPY;

EID: 84855932261     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3675862     Document Type: Article

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