Spin resonance of 2D electrons in a large-area silicon MOSFET

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 5, 2008, Pages 1659-1661

  Shankar, S ^a   Tyryshkin, A M ^a   Avasthi, S ^a   Lyon, S A ^a  

^a Princeton University   (United States)

Author keywords

2D electron gas (2DEG); EDMR; Electron spin resonance (ESR); MOSFET; Si SiO2 interface

Indexed keywords

GATE DIELECTRICS; PARAMAGNETIC RESONANCE; TWO DIMENSIONAL ELECTRON GAS; VOLTAGE CONTROL;

CONDUCTING REGIMES; GATE VOLTAGE; ISOLATED ELECTRONS; SILICON MOSFET DEVICES; TEMPERATURE DEPENDENCE;

MOSFET DEVICES;

EID: 39649101891     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.10.030     Document Type: Article

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