Properties of zinc oxynitride films deposited by reactive magnetron sputtering at room temperature

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7603, Issue , 2010, Pages

  Pau, J L ^a   Hernandez M J ^a   Cervera, M ^a   Ruiz, E ^a   Piqueras, J ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

Oxynitride; RBS; Rf sputtering; Zinc nitride; Zinc oxide

Indexed keywords

AMORPHOUS LAYER; C PARAMETER; CRYSTAL PHASE; CRYSTAL QUALITIES; CUTOFF WAVELENGTHS; ELECTRICAL CHARACTERIZATION; ELECTRICAL PROPERTY; N CONTENT; N-DOPED; NITROGEN COMPOSITION; OPTICAL TRANSMISSION MEASUREMENTS; OXYNITRIDE FILMS; OXYNITRIDES; RBS; REACTIVE MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; RF-SPUTTERING; ROOM TEMPERATURE; RUTHERFORD BACK-SCATTERING; TWO PHASIS; UNIT CELLS; WURTZITE LATTICE; X-RAY DIFFRACTION MEASUREMENTS; X-RAY PATTERNS; ZNO LAYERS;

ELECTRIC PROPERTIES; LIGHT TRANSMISSION; MAGNETRON SPUTTERING; NITRIDES; OPTICAL PROPERTIES; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

ZINC;

EID: 77951735712     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.844221     Document Type: Conference Paper

References (7)

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