|
|
Volumn 4, Issue 2, 2012, Pages 444-447
|
|
Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell
a
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
CHARGE STORAGE;
DIELECTRIC LAYER;
INSULATING FILM;
LIGAND SHELLS;
LOW-VOLTAGE DEVICES;
MEMORY TRANSISTORS;
NON-VOLATILE MEMORY TRANSISTORS;
ORGANIC SHELLS;
ORGANIC TRANSISTOR;
OXYGEN PLASMA TREATMENTS;
POTENTIAL APPLICATIONS;
SEMICONDUCTIVE LAYERS;
SOLUTION-PROCESSED;
ZNO NANOPARTICLES;
ZNO PARTICLES;
CHELATION;
ELECTRIC PROPERTIES;
ELECTRON MOBILITY;
LIGANDS;
NANOPARTICLES;
PLASMA APPLICATIONS;
SHELLS (STRUCTURES);
THIN FILMS;
VOLATILE FATTY ACIDS;
ZINC OXIDE;
TRANSISTORS;
LIGAND;
NANOMATERIAL;
ZINC OXIDE;
ARTICLE;
ARTIFICIAL MEMBRANE;
CHEMISTRY;
DATA STORAGE DEVICE;
EQUIPMENT;
EQUIPMENT DESIGN;
INSTRUMENTATION;
NANOTECHNOLOGY;
PARTICLE SIZE;
SEMICONDUCTOR;
ULTRASTRUCTURE;
COMPUTER STORAGE DEVICES;
EQUIPMENT DESIGN;
EQUIPMENT FAILURE ANALYSIS;
LIGANDS;
MEMBRANES, ARTIFICIAL;
NANOSTRUCTURES;
NANOTECHNOLOGY;
PARTICLE SIZE;
TRANSISTORS, ELECTRONIC;
ZINC OXIDE;
|
|
EID: 84855574467
PISSN: 20403364
EISSN: 20403372
Source Type: Journal
DOI: 10.1039/c2nr11589a Document Type: Article |
|
Times cited : (24)
|
|
References (23)
|
