Sol-gel ZnO in organic transistor-based non-volatile memory

Journal of Materials Science: Materials in Electronics

Volumn 21, Issue 2, 2010, Pages 125-129

  Wu, Tianyi ^a   Aw, Kean C ^a   Tjitra Salim, Noviana ^a   Gao, Wei ^a  

^a UNIVERSITY OF AUCKLAND   (New Zealand)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE MOBILITIES; DIGITAL CIRCUITRY; FABRICATION ROUTES; LOW VOLTAGES; MEMORY DEVICE; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY DEVICES; ORGANIC THIN FILM TRANSISTORS; ORGANIC TRANSISTOR; SOLUTION-PROCESSED; SOLUTION-PROCESSING; SUBTHRESHOLD; THRESHOLD VOLTAGE SHIFTS; ZNO;

DIGITAL DEVICES; FIELD EFFECT TRANSISTORS; INDUSTRIAL RESEARCH; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; ZINC OXIDE;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 77949275270     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-009-9879-2     Document Type: Article

References (16)

1. P. Pavan, R. Bez, P. Olivo, E. Zanoni, in Proceedings of the IEEE, vol. 85 (1997), pp. 1248-1271
2. A Sawa 2008 Mater. Today. 11 6 28 36 10.1016/S1369-7021(08)70119-6 10.1016/S1369-7021(08)70119-6 1:CAS:528:DC%2BD1cXnvVals74%3D (Pubitemid 351680723)
3. W Welnic M Wuttig 2008 Mater. Today. 11 6 20 27 10.1016/S1369-7021(08) 70118-4 10.1016/S1369-7021(08)70118-4 1:CAS:528:DC%2BD1cXnvValsrc%3D (Pubitemid 351680722)
4. J Jo T-M Lee J-S Yu C-H Kim D-S Kim E-S Lee M Esashi 2007 Sens. Mater. 19 487 496 1:CAS:528:DC%2BD1cXivFKhsr4%3D
5. CD Dimitrakopoulos DJ Mascaro 2001 IBM J. Res. Develop. 45 11 27 1:CAS:528:DC%2BD3MXivVGmurg%3D
6. P Liu Y Wu Y Li BS Ong S Zhu 2006 J. Am. Chem. Soc. 128 4554 4555 10.1021/ja060620l 10.1021/ja060620l 1:CAS:528:DC%2BD28XitFGktbs%3D 16594675
7. T.P. Alexander, T.J. Bukowski, G. Teowee, D.R. Uhlmann, K.C. McCarthy, J. Dawley, B.J.J. Zelinski, in Proceedings of the IEEE International Symposium on Applications of Ferroelectrics, vol. 2 (1996), pp. 585-588
8. Q Yu H Yang W Fu L Chang J Xu C Yu R Wei K Du H Zhu M Li G Zou 2007 Thin. Solid. Films. 515 3840 3843 10.1016/j.tsf.2006.10.077 10.1016/j.tsf.2006.10.077 1:CAS:528:DC%2BD2sXhvVGjtLk%3D 2007TSF...515.3840Y (Pubitemid 46240181)
9. G He JH, Cai G, Ni 2008 Mater. Chem. Phys. 110 110 114 10.1016/j.matchemphys.2008.01.023 10.1016/j.matchemphys.2008.01.023 1:CAS:528:DC%2BD1cXks1GisL0%3D
10. A Afzali CD Dimitrakopoulos TL Breen 2002 J. Am. Chem. Soc. 124 8812 8813 10.1021/ja0266621 10.1021/ja0266621 1:CAS:528:DC%2BD38XltFWksbs%3D 12137531 (Pubitemid 34811948)
11. K.D. Schroder, Advanced MOS devices. (Addison-Wesley, 1987)
12. E Orgiua I Manunzaa M Sannaa P Cosseddua A Bonfiglioa 2008 Thin. Solid. Films. 516 1533 1573 10.1016/j.tsf.2007.03.157 10.1016/j.tsf.2007.03.157 2008TSF...516.1533O (Pubitemid 351172358)
13. X-H Zhang SM Lee B Domercq B Kippelen 2008 Appl. Phys. Lett. 92 243307 10.1063/1.2940232 10.1063/1.2940232 2008ApPhL..92x3307Z
14. T Cahyahi JN Tey SG Mhaisalkar F Boey VR Rao R Lal ZH Huang GJ Qi Z-K Chen CM Ng 2007 Appl. Phys. Lett. 90 122112 10.1063/1.2715030 10.1063/1.2715030 2007ApPhL..90l2112C (Pubitemid 46482245)
15. SK Park TN Jackson JE Anthony DA Mourey 2007 Appl. Phys. Lett. 91 063514 10.1063/1.2768934 10.1063/1.2768934 2007ApPhL..91f3514P (Pubitemid 47247209)
16. A. Facchetti, J. Sanghyun, D. Janes, B. Jones, M. Wasielewski, T.J. Marks, Proceeding of Flexible Electronics and Displays Conference and Exhibition, (2008) pp. 1-7