Optical study of GaAs quantum dots embedded into AlGaAs nanowires

Semiconductor Science and Technology

Volumn 27, Issue 1, 2012, Pages

  Kats, V N ^a   Kochereshko, V P ^a,b   Platonov, A V ^a   Chizhova, T V ^a   Cirlin, G E ^a,c   Bouravleuv, A D ^a,c   Samsonenko, Yu B ^a,c   Soshnikov, I P ^a,c   Ubyivovk, E V ^b   Bleuse, J ^d   Mariette, H ^d  

^a IOFFE INSTITUTE   (Russian Federation)

^b ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^c ST PETERSBURG ACADEMIC UNIVERSITY   (Russian Federation)

^d CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE PHASIS; DECAY TIME; EXCITON LINES; GAAS; OPTICAL SPECTROSCOPY; OPTICAL STUDY; PHOTOLUMINESCENCE CHARACTERIZATION; PHOTOLUMINESCENCE SPECTRUM; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; SINGLE QUANTUM DOT; SPECTRAL DIFFUSION; TIME-RESOLVED PHOTOLUMINESCENCE;

ALUMINUM GALLIUM ARSENIDE; CRYSTALLINE MATERIALS; GALLIUM ARSENIDE; GROWTH TEMPERATURE; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

NANOWIRES;

EID: 84855373805     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/1/015009     Document Type: Article

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