Interferometric measurement in GaAs single quantum dots: Temperature dependence of exciton decoherence

Journal of Luminescence

Volumn 122-123, Issue 1-2, 2007, Pages 789-791

  Kuroda, Keiji ^a   Kuroda, Takashi ^a,b   Sakoda, Kazuaki ^a,c   Kido, Giyuu ^a,d   Koguchi, Nobuyuki ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Decoherence; Exciton; GaAs AlGaAs; Single quantum dot

Indexed keywords

DECOHERENCE; SINGLE QUANTUM DOT; SINGLE-PHOTON INTERFEROMETRY;

EXCITONS; INTERFEROMETRY; PHOTOEMISSION; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33750961214     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2006.01.289     Document Type: Article

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