Oxygen-vacancy-mediated negative differential resistance in la and Mg co-substituted BiFeO 3 thin film

Journal of Applied Physics

Volumn 110, Issue 12, 2011, Pages

  Ke, Qingqing ^a   Kumar, Amit ^a   Lou, Xiaojie ^a   Zeng, Kaiyang ^a   Wang, John ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

IONIC DEFECTS; LEAKAGE MECHANISM; NEGATIVE DIFFERENTIAL RESISTANCES; POLARIZED DISTRIBUTIONS;

ELECTRIC FIELDS; NEGATIVE RESISTANCE; OXYGEN; OXYGEN VACANCIES;

THIN FILMS;

EID: 84855331231     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3668119     Document Type: Article

References (21)

1. N. A. Hill, J. Phys. Chem. B 104, 6694 (2000). 10.1021/jp000114x
2. W. Eerenstein, N. D. Mathur, and J. F. Scott, Nature (London) 442, 759 (2006). 10.1038/nature05023 (Pubitemid 44261898)
3. X. Qi, J. Dho, R. Tomov, M. G. Blamire, and J. L. MacManus-Driscoll, Appl. Phys. Lett. 86, 062903 (2005). 10.1063/1.1862336 (Pubitemid 40665522)
4. C. Wang, M. Takahashi, H. Fujino, X. Zhao, E. Kume, T. Horiuchi, and S. Sakai, J. Appl. Phys. 99, 054104 (2006). 10.1063/1.2177430
5. G. D. Hu, S. H. Fan, C. H. Yang, and W. B. Wu, Appl. Phys. Lett. 92, 192905 (2008). 10.1063/1.2918130 (Pubitemid 351713472)
6. C. H. Yang, J. Seidel, S. Y. Kim, P. B. Rossen, P. Yu, M. Gajek, Y. H. Chu, L. W. Martin, M. B. Holcomb, Q. He, P. Maksymovych, N. Balke, S. V. Kalinin, A. P. Baddorf, S. R. Basu, M. L. Scullin, and R. Ramesh, Nature Mater. 8, 485 (2009). 10.1038/nmat2432
7. H. D. Chen, K. R. Udayakumar, K. K. Li, C. J. Gaskey, and L. E. Cross, Integr. Ferroelectr. 15, 89 (1997). 10.1080/10584589708015699
8. K. Watanabe, A. J. Hartmann, R. N. Lamb, and J. F. Scott, J. Appl. Phys. 84, 2170 (1998). 10.1063/1.368279
9. Z. Wen, X. Shen, J. Wu, D. Wu, A. Li, B. Yang, Z. Wang, H. Chen, and J. Wang, Appl. Phys. Lett. 96, 202904 (2010). 10.1063/1.3432083
10. M. Kuwabara, H. Matsuda, and K. Hamamoto, J. Am. Ceram. Soc. 80, 1881 (1977). 10.1111/j.1151-2916.1997.tb03065.x
11. M. A. Lampert, Phys. Rev. 125, 126 (1962). 10.1103/PhysRev.125.126
12. A. K. Maity, J. Y. Lee, A. Sen, and H. S. Maiti, Jpn. J. Appl. Phys., Part 1 43, 7155 (2004). 10.1143/JJAP.43.7155 (Pubitemid 40002028)
13. M. Dawber and J. F. Scott, J. Phys. Condens. Matter 16, L515 (2004). 10.1088/0953-8984/16/49/L04 (Pubitemid 40002932)
14. Q. Q. Ke, X. J. Lou, Y. Wang, and J. Wang, Phys. Rev. B 82, 024102 (2010). 10.1103/PhysRevB.82.024102
15. S. Saha and S. B. Krupanidhi, J. Appl. Phys. 87, 849 (2000). 10.1063/1.371952
16. M. Dawber and J. F. Scott, Appl. Phys. Lett. 76, 1060 (2000). 10.1063/1.125938
17. P. Zubko, D. J. Jung, and J. F. Scott, J. Appl. Phys. 100, 114113 (2006). 10.1063/1.2382479 (Pubitemid 46012221)
18. K. C. Kao and W. Hwang, Electrical Transport in Solids: With Particular Reference to Organic Semiconductors (Pergamon, London, 1981).
19. Y. Kim, C. Bae, K. Ryu, H. Ko, Y. K. Kim, S. Hong, and H. Shin, Appl. Phys. Lett. 94, 032907 (2009). 10.1063/1.3046786
20. M. F. Wong, T. S. Herng, Z. Zhang, K. Zeng, and J. Ding, Appl. Phys. Lett. 97, 232103 (2010). 10.1063/1.3521281
21. D. S. Jeong and C. S. Hwang, J. Appl. Phys. 98, 113701 (2005). 10.1063/1.2135895 (Pubitemid 41816233)