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Physical Review B - Condensed Matter and Materials Physics

Volumn 82, Issue 2, 2010, Pages

Oxygen-vacancy-related relaxation and scaling behaviors of Bi 0.9La0.1Fe0.98Mg0.02O3 ferroelectric thin films

(4) Ke, Qingqing a Lou, Xiaojie a Wang, Yang b Wang, John a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77956518480 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.82.024102 Document Type: Article

Times cited : (268)

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