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Volumn 95, Issue 17, 2009, Pages

Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate

(5) Pour, S Abdollahi a Nguyen, B M a Bogdanov, S a Huang, E K a Razeghi, M a

a Northwestern University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS; CUTOFF WAVELENGTHS; DETECTIVITY; DIFFERENTIAL RESISTANCES; EXPECTED VALUES; FIELD OF VIEWS; GAAS SUBSTRATES; INAS/GASB SUPERLATTICES; LONG-WAVELENGTH INFRARED; ORDER OF MAGNITUDE; REFERENCE DEVICES; TYPE II; ZERO BIAS;

HETEROJUNCTION BIPOLAR TRANSISTORS; LATTICE MISMATCH; PHOTODIODES; POLYIMIDES; SEMICONDUCTING GALLIUM; SUBSTRATES; SUPERLATTICES;

GALLIUM ALLOYS;

EID: 70350732757 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3254719 Document Type: Article

Times cited : (25)

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