XBn barrier photodetectors based on InAsSb with high operating temperatures

Optical Engineering

Volumn 50, Issue 6, 2011, Pages

  Klipstein, Philip ^a   Klin, Olga ^a   Grossman, Steve ^a   Snapi, Noam ^a   Lukomsky, Inna ^a   Aronov, Daniel ^a   Yassen, Michael ^a   Glozman, Alex ^a   Fishman, Tal ^a   Berkowicz, Eyal ^a   Magen, Osnat ^a   Shtrichman, Itay ^a   Weiss, Eliezer ^a  

^a SCD Semiconductor Devices Ltd   (Israel)

Author keywords

diffusion currents; generation recombination; high operating temperatures; indium arsenide antimonide; infrared detectors; nBn; Shockley Read Hall; XBn

Indexed keywords

DIFFUSION CURRENTS; GENERATION-RECOMBINATION; HIGH OPERATING TEMPERATURE; NBN; SHOCKLEY-READ-HALL; XBN;

ARSENIC COMPOUNDS; CARRIER LIFETIME; DARK CURRENTS; DETECTORS; DIFFUSION BARRIERS; FOCAL PLANE ARRAYS; INDIUM ARSENIDE; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; TEMPERATURE;

INDIUM ANTIMONIDES;

EID: 81755178966     PISSN: 00913286     EISSN: 15602303     Source Type: Journal    
DOI: 10.1117/1.3572149     Document Type: Article

References (15)

1. P. C. Klipstein, "Depletionless photodiode with suppressed dark current.. . ," U.S. Patent No. 7795640 (2 July 2003).
2. A. White, "Infrared detectors," U.S. Patent No. 4,679,063 (22 September 1983).
3. S. Maimon and G. W. Wicks, "nBn detector, an infrared detector with reduced dark current and higher operating temperature," Appl. Phys. Lett. 89, 151109 (2006).
4. P. C. Klipstein, "XBn barrier photodetectors for high sensitivity and high operating temperature infrared sensors" Proc. SPIE 6940, 6940-2U (2008).
5. D.W. Palmer "Growth and Characterisation of Semiconductors" R. A. Stradling and P. C. Klipstein, Eds., pp. 187, Adam Hilger, New York (1990).
6. Keithley Instruments, Low Level Measurements Handbook, 6th ed., Keithley Instruments.
7. P. C. Klipstein, O. Klin, S. Grossman, N. Snapi, B. Yaakobovitz, M. Brumer, I. Lukomsky, D. Aronov, M. Yassen, B. Yofis, A. Glozman, T. Fishman, E. Berkowicz, O. Magen, I. Shtrichman, and E. Weiss, "XBn barrier detectors for high operating temperatures," Proc. SPIE 7608, 7608-65 (2010).
8. E. Burstein, "Anomalous optical absorption limit in InSb," Phys. Rev. 93, 632-633 (1954).
9. T. S. Moss, Proc. Phys. Soc. (London) B67, 775 (1954).
10. M. A. Marciniak et al., "Optical characterization of molecular beam epitaxially grown InAsSb nearly lattice matched to GaSb," J. Appl. Phys. 84, 480-488 (1998).
11. O. Madelung, Ed., Landolt-Bornstein Numerical Data and Functional Relationships in Science and Technology: New Series, Semiconductors, Vol. 17a, Sec. 2.15, Figs, 51 and 52, Springer-Verlag, Berlin (1982).
12. F. P. Kesamanly, T. S. Lagunova,D.N. Nasledov, L.A. Nikolaeva, and M. N. Pivovarov, Fiz. i Tekhn. Polupr. (Russian ed.) 2(1) 56-63(1968).
13. M.Y. Pines and O. M. Staffsudd, "Recombination processes in intrinsic semiconductors using impact ionization capture cross sections in indium antimonide and mercury cadmium telluride," Infrared Phys. 20, 73-91 (1980).
14. J. E. L. Hollis, S. C. Choo, and E. D. Heasell, "Recombination centers in InSb," J. Appl. Phys. 38, 1626-1636 (1967).
15. J. De Lyon, J. E. Jensen, I. Kasai, G. M. Venzor, K. Kosai, J. B. de Bruin, andW. L. Ahlgren, "Molecular-beam epitaxial growth and hightemperature performance of HgCdTe midwave infrared detectors" J. Electron. Mater. 31, 220-226 (2002).