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Semiconductor Science and Technology

Volumn 16, Issue 12, 2001, Pages 992-996

Characteristics of InAs0.8Sb0.2 photodetectors on GaAs substrates

(6) Besikci, Cengiz a Ozer, Selcuk a Van Hoof, Chris b Zimmermann, Lars b John, Joachim b Merken, Patrick b,c

a MIDDLE EAST TECHNICAL UNIVERSITY (Turkey)

b IMEC (Belgium)

c ROYAL MILITARY ACADEMY (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; HIGH TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; PHOTODIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

LARGE AREA FOCAL PLANE ARRAYS; TRAP-ASSISTED TUNNELING;

PHOTODETECTORS;

EID: 0035652801 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/12/308 Document Type: Article

Times cited : (19)

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