GaSb single-crystal growth by vertical gradient freeze

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Reijnen, L ^a   Brunton, R ^a   Grant, I R ^a  

^a IQE INC   (United States)

Author keywords

A2. Gradient freeze technique; A2. Single crystal growth; A2. Vertical gradient freeze; B1. GaSb; B2. Semiconducting III V materials; B3. Thermophotovoltaics

Indexed keywords

DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); GALLIUM COMPOUNDS; NUCLEATION; PHOTOVOLTAIC EFFECTS; SINGLE CRYSTALS; SOLID SOLUTIONS; SUBSTRATES;

GASB; GRADIENT FREEZE TECHNIQUE; SEMICONDUCTING III-V MATERIALS; SINGLE CRYSTAL GROWTH; THERMOPHOTOVOLTAICS; VERTICAL GRADIENT FREEZE;

CRYSTAL GROWTH;

EID: 15844422661     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.003     Document Type: Conference Paper

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