Characteristics of Ti-doped ITO films grown by DC magnetron sputtering

Ceramics International

Volumn 38, Issue SUPPL. 1, 2012, Pages

  Chung, Sung Mook ^a   Shin, Jae Heon ^a   Cheong, Woo Seok ^a   Hwang, Chi Sun ^a   Cho, Kyoung Ik ^a   Kim, Young Jin ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Kyonggi University   (South Korea)

Author keywords

C. Electrical properties; C. Thermal properties; D. TiO 2; Sputtering

Indexed keywords

D. TIO 2; DC MAGNETRON SPUTTERING; DIRECT-CURRENT; INDIUM TIN OXIDE THIN FILMS; ITO FILMS; POLYCRYSTALLINE; ROOM TEMPERATURE; TI DOPING;

AMORPHOUS FILMS; AMORPHOUS MATERIALS; CARRIER CONCENTRATION; INDIUM COMPOUNDS; OXIDE FILMS; SEMICONDUCTOR DOPING; SPUTTERING; THERMODYNAMIC PROPERTIES; THIN FILMS; TIN; TIN OXIDES; TITANIUM; TITANIUM DIOXIDE;

ELECTRIC PROPERTIES;

EID: 84655169754     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2011.05.110     Document Type: Conference Paper

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