Opto-electronic properties of titanium-doped indium-tin-oxide films deposited by RF magnetron sputtering at room temperature

Materials Science and Engineering: B

Volumn 134, Issue 1, 2006, Pages 68-75

  Yang, Chih Hao ^a   Lee, Shih Chin ^a   Lin, Tien Chai ^b   Zhuang, Wen Yan ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KUN SHAN UNIVERSITY   (Taiwan)

Author keywords

Annealing; Indium tin oxide; Physical vapor deposition (PVD); Titanium

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRONIC PROPERTIES; ENERGY GAP; INDIUM COMPOUNDS; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; PHYSICAL VAPOR DEPOSITION; TITANIUM;

INDIUM TIN OXIDE; TITANIUM DOPING; TITANIUM FILMS; TITANIUM TARGET;

METALLIC FILMS;

EID: 33749238501     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.07.027     Document Type: Article

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