Thermal effect on the electroluminescence of InGaN/GaN multiquantum-well light-emitting devices

Solid-State Electronics

Volumn 68, Issue , 2012, Pages 63-67

  Wu, Ya Fen ^a   Hsu, Hung Pin ^a   Liu, Tsung Yu ^a  

^a MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

Electroluminescence; Heating effect; Localized states; Multiquantum wells

Indexed keywords

BAND FILLING EFFECTS; BAND FILLINGS; CARRIER DYNAMICS; EMISSION ENERGIES; EMISSION SPECTRUMS; EXPERIMENTAL DATA; HEATING EFFECT; INGAN/GAN; LIGHT EMITTING DEVICES; LOCALIZED STATES; MULTIQUANTUM WELLS; NON-RADIATIVE RECOMBINATIONS; PEAK ENERGY; S-SHAPED; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; THERMAL EMISSIONS; THERMAL MODEL;

CURRENT DENSITY; EMISSION SPECTROSCOPY; HEATING; LIGHT; LIGHT EMISSION; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS; WELLS;

ELECTROLUMINESCENCE;

EID: 84655169644     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.09.013     Document Type: Article

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