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Volumn 338, Issue 1, 2012, Pages 80-84

Surface reconstructions during growth of GaAs 1-xBi x alloys by molecular beam epitaxy

Author keywords

A1. Reflection high energy electron diffraction; A1. Surface structure; A3. Molecular beam epitaxy; B1. Bismuth compounds; B2. Semiconducting gallium arsenide; B2. Semiconducting IIIV materials

Indexed keywords

ELECTRON DIFFRACTION STUDY; FLUX RATIO; GAAS; GAAS SUBSTRATES; IN-SITU; RECONSTRUCTED SURFACES; SEMI CONDUCTING III-V MATERIALS; SURFACE PHASIS; TEMPERATURE RANGE;

EID: 84655162178     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.09.055     Document Type: Article
Times cited : (45)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.