|
Volumn 338, Issue 1, 2012, Pages 80-84
|
Surface reconstructions during growth of GaAs 1-xBi x alloys by molecular beam epitaxy
|
Author keywords
A1. Reflection high energy electron diffraction; A1. Surface structure; A3. Molecular beam epitaxy; B1. Bismuth compounds; B2. Semiconducting gallium arsenide; B2. Semiconducting IIIV materials
|
Indexed keywords
ELECTRON DIFFRACTION STUDY;
FLUX RATIO;
GAAS;
GAAS SUBSTRATES;
IN-SITU;
RECONSTRUCTED SURFACES;
SEMI CONDUCTING III-V MATERIALS;
SURFACE PHASIS;
TEMPERATURE RANGE;
BISMUTH;
ELECTRON DIFFRACTION;
EPITAXIAL GROWTH;
GALLIUM ARSENIDE;
MOLECULAR BEAM EPITAXY;
REPAIR;
SEMICONDUCTING FILMS;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING GALLIUM ARSENIDE;
SURFACES;
SURFACE RECONSTRUCTION;
|
EID: 84655162178
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.09.055 Document Type: Article |
Times cited : (45)
|
References (20)
|