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Volumn 27, Issue 3-4, 2011, Pages 109-113

Electrical characteristics of Cu-doped In 2O 3/Sb-doped SnO 2 ohmic contacts for high-performance GaN-based light-emitting diodes

(6) Oh, Joon Ho a Seong, Tae Yeon a Hong, H G b Kim, Kyoung Kook c Yoon, S W d Ahn, J P d

a Korea University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

c Korea Polytechnic University (South Korea)

d Korea Institute of Science and Technology (South Korea)

Author keywords

Light emitting diode; Ohmic contact; SnO 2; Transparent electrode

Indexed keywords

ANNEALING TEMPERATURES; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL CHARACTERISTIC; GAN-BASED LIGHT-EMITTING DIODES; OHMIC BEHAVIOR; OHMIC FORMATION; P-TYPE GAN; SCANNING TRANSMISSION ELECTRON MICROSCOPES; SCHOTTKY BARRIER HEIGHTS; SNO 2; TRANSPARENT ELECTRODE; X RAY PHOTOEMISSION SPECTROSCOPY;

ANNEALING; ANTIMONY; BINDING ENERGY; CHEMICAL PROPERTIES; DIODES; ELECTRIC CONTACTORS; ELECTRIC PROPERTIES; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; OHMIC CONTACTS; PHOTOELECTRON SPECTROSCOPY; SCHOTTKY BARRIER DIODES; TIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84655161486 PISSN: 13853449 EISSN: 15738663 Source Type: Journal
DOI: 10.1007/s10832-011-9653-8 Document Type: Article

Times cited : (5)

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