Tunneling emitter bipolar transistor as a characterization tool for dielectrics and their interfaces

ECS Transactions

Volumn 41, Issue 3, 2011, Pages 325-334

  Yalon, E ^a   Gavrilov, A ^a   Cohen, S ^a   Mistele, D ^a   Mikhelashvili, V ^a   Meyler, B ^a   Salzman, J ^a   Ritter, D ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ELECTRON INJECTION; HIGH-K DIELECTRIC; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; METAL INSULATOR BOUNDARIES; MIS DEVICES; NITROGEN COMPOUNDS; PHOTONICS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR JUNCTIONS; TRANSISTORS;

CHARACTERIZATION TOOLS; DIELECTRIC-SEMICONDUCTOR INTERFACES; INTERFACE RECOMBINATION VELOCITY; METAL-INSULATOR-METAL STRUCTURES; METAL-INSULATOR-SEMICONDUCTORS; RECOMBINATION CENTERS; TRANSPORT MECHANISM; TUNNELING EMITTER BIPOLAR TRANSISTORS;

DIELECTRIC MATERIALS;

EID: 84857308058     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3633049     Document Type: Conference Paper

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