Role of twin boundaries in semiconductor to metal transition characteristics of VO2 films

Applied Physics Letters

Volumn 97, Issue 7, 2010, Pages

  Yang, Tsung Han ^a   Jin, Chunming ^b   Zhou, Honghui ^a   Narayan, Roger J ^b   Narayan, J ^a  

^a North Carolina State University   (United States)

^b UNIVERSITY OF NORTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C-SAPPHIRE; CURRENT FLOWS; GRAIN BOUNDARY ENGINEERING; NORMAL DIRECTION; SEMICONDUCTOR-TO-METAL TRANSITIONS; TWIN BOUNDARIES; ZNO; ZNO BUFFER LAYER;

GRAIN BOUNDARIES; PARALLEL FLOW; SEMICONDUCTOR INSULATOR BOUNDARIES; ZINC OXIDE;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 77956040185     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3481075     Document Type: Article

References (13)

1. F. J. Morin, Phys. Rev. Lett. PRLTAO 0031-9007 3, 34 (1959). 10.1103/PhysRevLett.3.34
2. J. B. Goodenough, Phys. Rev. PHRVAO 0031-899X 117, 1442 (1960). 10.1103/PhysRev.117.1442
3. R. Heckingbottom and J. W. Linnett, Nature (London) NATUAS 0028-0836 194, 678 (1962). 10.1038/194678a0
4. J. Narayan and V. M. Bhosle, J. Appl. Phys. JAPIAU 0021-8979 100, 103524 (2006). 10.1063/1.2384798
5. J. Nag and R. F. Haglund, Jr., J. Phys.: Condens. Matter JCOMEL 0953-8984 20, 264016 (2008). 10.1088/0953-8984/20/26/264016
6. E. U. Donev, R. Lopez, L. C. Feldman, and R. F. Haglund, Jr., Nano Lett. NALEFD 1530-6984 9, 702 (2009). 10.1021/nl8031839
7. K. Okimura, J. Sakai, and S. Ramanathan, J. Appl. Phys. JAPIAU 0021-8979 107, 063503 (2010). 10.1063/1.3327422
8. T. Yang, C. Jin, R. Aggarwal, R. J. Narayan, and J. Narayan, J. Mater. Res. JMREEE 0884-2914 25, 422 (2010). 10.1557/jmr.2010.0059
9. T. Yang, R. Aggarwal, A. Gupta, H. Zhou, R. J. Narayan, and R. Narayan, J. Appl. Phys. JAPIAU 0021-8979 107, 053514 (2010). 10.1063/1.3327241
10. W. Wei, C. Jin, J. Narayan, and R. J. Narayan, J. Appl. Phys. JAPIAU 0021-8979 107, 013510 (2010). 10.1063/1.3271415
11. G. A. Hirata, J. McKittrick, J. Siqueiros, O. A. Lopez, T. Cheeks, O. Contreras, and J. Y. Yi, J. Vac. Sci. Technol. A JVTAD6 0734-2101 14, 791 (1996). 10.1116/1.580391
12. C. Jin, W. Wei, H. Zhou, T. Yang, and R. J. Narayan, Appl. Phys. Lett. APPLAB 0003-6951 93, 251102 (2008). 10.1063/1.3054347
13. T. Yang, S. Nori, H. Zhou, and J. Narayan, Appl. Phys. Lett. APPLAB 0003-6951 95, 102506 (2009). 10.1063/1.3224202