Electrical properties and magnetic response of cobalt germanosilicide nanowires

ACS Nano

Volumn 5, Issue 12, 2011, Pages 9552-9558

  Tsai, Chun I ^a   Wang, Chiu Yen ^a   Tang, Jianshi ^b   Hung, Min Hsiu ^a   Wang, Kang L ^b   Chen, Lih Juann ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

cobalt germanosilicide; electrical transport; magnetoresistance; nanowires; spintronics

Indexed keywords

BAND GAP NARROWING; CHEMICAL VAPOR TRANSPORT; ELECTRICAL MEASUREMENT; ELECTRICAL RESISTIVITY; ELECTRICAL TRANSPORT; GE CONCENTRATIONS; GERMANOSILICIDE; GROWTH METHOD; INTERCONNECT MATERIALS; LOW TEMPERATURES; MAGNETIC RESPONSE; MR RATIO; NANO-DEVICES; PARTIAL SUBSTITUTION; REACTION TEMPERATURE; SPIN-GLASS BEHAVIOR;

CARBON DIOXIDE; COBALT; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; FERROMAGNETISM; MAGNETIC FIELDS; MAGNETIC PROPERTIES; MAGNETOELECTRONICS; MAGNETORESISTANCE; NANOTECHNOLOGY; NANOWIRES; SILICIDES; SILICON; SPIN GLASS;

GERMANIUM;

COBALT; GERMANIUM; NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; MAGNETISM; MATERIALS TESTING; PARTICLE SIZE; ULTRASTRUCTURE;

COBALT; ELECTRIC CONDUCTIVITY; GERMANIUM; MAGNETICS; MATERIALS TESTING; NANOSTRUCTURES; PARTICLE SIZE; SILICON;

EID: 84555177451     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn202695a     Document Type: Article

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