Scanning capacitance microscopy for carrier profiling in semiconductors

Solid State Technology

Volumn 40, Issue 6, 1997, Pages 125-133

  Erickson, Andrew N ^a,b,c,d   Adderton, Dennis M ^a,e   Strausser, Yale E ^a   Tench, Robert J ^a,f  

^a Digital Instruments   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c UNIVERSITY OF UTAH   (United States)

^d NONE   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; ELECTRIC FIELD EFFECTS; MICROSCOPIC EXAMINATION; NANOTECHNOLOGY; CAPACITORS;

SCANNING CAPACITANCE MICROSCOPY; SCANNING CAPACITANCE MICROSCOPY (SCM);

SEMICONDUCTOR DEVICE TESTING;

EID: 0003618268     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (7)

1. A.C. Diebold, et al., "Characterization of Two-Dimensional Dopant Profiles: Status and Review," J. Vac. Sci. Technol. B, 14(1), p. 196, 1996.
2. H. Walk, et al., "New Approaches to Simulation-Assisted Design and Process Development," Solid State Technology, p. S16, March 1997.
3. M.E. Law, "Technology Computer Aided Design Characterization Needs and Requirements," J. Vac. Sci. Technol. B, 14(1), p. 213, 1996.
4. A.N. Erickson, et al., "Quantitative Scanning Capacitance Microscopy Analysis of Two-Dimensional Dopant Concentrations at Nanoscale Dimensions," J. of Elec. Mat., 25(2), p. 301, 1996.
5. G. Neubauer, et al., "Two-Dimensional Scanning Capacitance Measurements of Cross-Sectioned Very Large Scale Integration Test Structures," J. Vac. Sci. Technol. B, 14(1), p. 426, 1996.
6. K.L. Pey, et al., "Scanning Capacitance Microscopy Analysis of DRAM Trench Capacitors," presented at the 1996 IEEE international Workshop on Memory Technology, Design and Testing, Singapore, Aug. 1996.
7. G. Neubauer, M.L.A. Dass, T.J. Johnson, "Imaging VLSI Cross-Sections by Atomic Force Microscopy." Mat. Res. Soc., pp. 265, 283, 1992.