Coherent magnetic semiconductor nanodot arrays

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Wang, Yong ^a,b   Xiu, Faxian ^b   Wang, Ya ^a   Zou, Jin ^a   Beyermann, Ward P ^c   Zhou, Yi ^b   Wang, Kang L ^b  

^a UNIVERSITY OF QUEENSLAND   (Australia)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC SEMICONDUCTORS; MAGNETIC STORAGE; MAGNETISM; MANGANESE COMPOUNDS; NANODOTS; NANOSTRUCTURED MATERIALS; MAGNETOELECTRONICS; MANGANESE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES;

GEOMETRICAL EFFECT; LOW-POWER DISSIPATION; MAGNETIC MEMORY; NANO-DOT ARRAYS; RELIABLE METHODS; REPRODUCIBILITIES; SEMICONDUCTOR NANODOT; SPINTRONIC DEVICE; HIGH QUALITY; HIGH-DENSITY; MAGNETIC MEMORIES; MN-DOPED; SELF-ASSEMBLED; SI TECHNOLOGY;

GERMANIUM COMPOUNDS; MAGNETISM;

EID: 84255185206     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-134     Document Type: Article

References (42)

1. Tanaka M: Ferromagnet (MnAs)/III-V semiconductor hybrid structures. Semicond Sci Technol 2002, 17:327-341.
2. Dietl T: Self-organized growth controlled by charge states of magnetic impurities. Nat Mater 2006, 5:673-673.
3. Kuroda S, Nishizawa N, Takita K, Mitome M, Bando Y, Osuch K, Dietl T: Origin and control of high-temperature ferromagnetism in semiconductors. Nat Mater 2007, 6:440-446.
4. Kioseoglou G, Hanbicki AT, Sullivan JM, van 't Erve OMJ, Li CH, Erwin SC, Mallory R, Yasar M, Petrou A, Jonker BT: Electrical spin injection from an n- type ferromagnetic semiconductor into a III-V device heterostructure. Nat Mater 2004, 3:799-803.
5. Dietl T, Awschalom DD, Kaminska M, Ohno H: Spintronics Elsevier: Amsterdam; 2008.
6. Ohno H: Making nonmagnetic semiconductors ferromagnetic. Science 1998,281:951-956.
7. Macdonald AH, Schiffer P, Samarth N: Ferromagnetic semiconductors: moving beyond (Ga, Mn)As. Nat Mater 2005, 4:195-202.
8. Ohno Y, Young DK, Beschoten B, Matsukura F, Ohno H, Awschalom DD: Electrical spin injection in a ferromagnetic semiconductor heterostructure. Nature 1999, 402:790-792.
9. Xiu FX, Wang Y, Kim J, Hong A, Tang JS, Jacob AP, Zou J, Wang KL: Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots. Nat Mater 2010, 9:337-344.
10. Xiu FX, Wang Y, Kou XF, Upadhyaya P, Zhou Y, Zou J, Wang KL: Synthesis of High-Curie-Temperature Fe0.02Ge0.98 Quantum Dots. Journal of the American Chemical Society 2010, 132:11425-11427.
11. Wang Y, Zou J, Zhao ZM, Han XH, Zhou XY, Wang KL: Mn behavior in Ge0.96Mn0.04 magnetic thin films grown on Si. J Appl Phys 2008, 103:3.
12. Samarth N, Chun SH, Ku KC, Potashnik SJ, Schiffer P: Hybrid ferromagnetic/ semiconductor heterostructures for spintronics. Solid State Communications 2003, 127:173-179.
13. Hai PN, Yokoyama M, Ohya S, Tanaka M: Spin polarized tunneling in III-V- based heterostructures with a ferromagnetic MnAs thin film and GaAs: MnAs nanoclusters. Physica E 2006, 32:416-418.
14. Tanaka M, Shimizu H, Miyamura M: Enhancement of magneto-optical effect in a GaAs: MnAs hybrid nanostructure sandwiched by GaAs/AlAs distributed Bragg reflectors: epitaxial semiconductor-based magneto- photonic crystal. Journal of Crystal Growth 2001, 227:839-846.
15. Moreno M, Trampert A, Jenichen B, Daweritz L, Ploog KH: Correlation of structure and magnetism in GaAs with embedded Mn(Ga)As magnetic nanoclusters. J Appl Phys 2002, 92:4672-4677.
16. Yokoyama M, Yamaguchi H, Ogawa T, Tanaka M: Zinc-blende-type MnAs nanoclusters embedded in GaAs. J Appl Phys 2005, 97:10D317.
17. Wang WZ, Deng JJ, Lu J, Sun BQ, Zhao JH: Memory effect in a system of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs. Applied Physics Letters 2007, 91:202503.
18. Bougeard D, Ahlers S, Trampert A, Sircar N, Abstreiter G: Clustering in a precipitate-free GeMn magnetic semiconductor. Phys Rev Lett 2006, 97:237202.
19. Jamet M, Barski A, Devillers T, Poydenot V, Dujardin R, Bayle-Guillemaud P, Rothman J, Bellet-Amalric E, Marty A, Cibert J, Mattana R, Tatarenko S: High- Curie-temperature ferromagnetism in self-organized Ge1-xMnx nanocolumns. Nat Mater 2006, 5:653-659.
20. Pinto N, Morresi L, Ficcadenti M, Murri R, D'Orazio F, Lucari F, Boarino L, Amato G: Magnetic and electronic transport percolation in epitaxial Ge1- xMnx films. Phys Rev B 2005, 72:165203.
21. Ahlers S, Bougeard D, Sircar N, Abstreiter G, Trampert A, Opel M, Gross R: Magnetic and structural properties of GexMn1-x films: Precipitation of intermetallic nanomagnets. Physical Review B (Condensed Matter and Materials Physics) 2006, 74:214411.
22. Devillers T, Jamet M, Barski A, Poydenot V, Bayle-Guillemaud P, Bellet-Amalric E, Cherifi S, Cibert J: Structure and magnetism of self-organized Ge1-xMnx nanocolumns on Ge(001). Physical Review B (Condensed Matter and Materials Physics) 2007, 76:205306.
23. Wang Y, Xiu FX, Zou J, Wang KL, Jacob AP: Tadpole shaped Ge0.96Mn0.04 magnetic semiconductors grown on Si. Applied Physics Letters 2010, 96:051905.
24. Xiu FX, Wang Y, Wong K, Zhou Y, Kou XF, Zou J, Wang KL: MnGe magnetic nanocolumns and nanowells. Nanotechnology 2010, 21:255602.
25. Strom NW, Wang ZM, Lee JH, AbuWaar ZY, Mazur YI, Salamo GJ: Self- assembled InAs quantum dot formation on GaAs ring-like nanostructure templates. Nanoscale Res Lett 2007, 2:112-117.
26. Lee JH, Wang ZM, Kim ES, Kim NY, Park SH, Salamo GJ: Various Quantum- and Nano-Structures by III-V Droplet Epitaxy on GaAs Substrates. Nanoscale Res Lett 2010, 5:308-314.
27. Xie QH, Madhukar A, Chen P, Kobayashi NP: Vertically self-organized InAs Quantum box island on GaAs (100). Phys Rev Lett 1995, 75:2542-2545.
28. Solomon GS, Trezza JA, Marshall AF, Harris JS: Vertically aligned and electronically coupled growth induced InAs islands in GaAs. Phys Rev Lett 1996,76:952-955.
29. Slater JC: ATOMIC RADII IN CRYSTALS. J Chem Phys 1964, 41:3199.
30. Liao XZ, Zou J, Cockayne DJH, Wan J, Jiang ZM, Jin G, Wang KL: Annealing effects on the microstructure of Ge/Si(001) quantum dots. Applied Physics Letters 2001, 79:1258-1260.
31. Bihler C, Jaeger C, Vallaitis T, Gjukic M, Brandt MS, Pippel E, Woltersdorf J, Gosele U: Structural and magnetic properties of Mn5Ge3 clusters in a dilute magnetic germanium matrix. Applied Physics Letters 2006, 88:112506.
32. Wang Y, Zou J, Zhao ZM, Han XH, Zhou XY, Wang KL: Direct structural evidences of Mn11Ge8 and Mn5Ge2 clusters in Ge0.96Mn0.04 thin films. Applied Physics Letters 2008, 92:101903.
33. Park YD, Hanbicki AT, Erwin SC, Hellberg CS, Sullivan JM, Mattson JE, Ambrose TF, Wilson A, Spanos G, Jonker BT: A group-IV ferromagnetic semiconductor: MnxGe1-x. Science 2002, 295:651-654.
34. Sze SM: Physics of Semiconductor Devices Wiley: New York; 1981.
35. Ma YJ, Zhang Z, Zhou F, Lu L, Jin AZ, Gu CZ: Hopping conduction in single ZnO nanowires. Nanotechnology 2005, 16:746-749.
36. Han JP, Shen MR, Cao WW, Senos AMR, Mantas PQ: Hopping conduction in Mn-doped ZnO. Applied Physics Letters 2003, 82:67-69.
37. Schlovskii BI, Efros AL: Electronics properties of doped semiconductors Spinger-Verlag: Berlin; 1984.
38. Bottger H, Bryksin V: Hopping conduction in solids Akademie-Verlag: Berlin; 1985.
39. Ganesan K, Bhat HL: Growth, magnetotransport, and magnetic properties of ferromagnetic (In,Mn)Sb crystals. J Appl Phys 2008, 103:6.
40. Yuldashev SU, Shon Y, Kwon YH, Fu DJ, Kim DY, Kim HJ, Kang TW, Fan X: Enhanced positive magnetoresistance effect in GaAs with nanoscale magnetic clusters. J Appl Phys 2001, 90:3004-3006.
41. Solin SA, Thio T, Hines DR, Heremans JJ: Enhanced room-temperature geometric magnetoresistance in inhomogeneous narrow-gap semiconductors. Science 2000, 289:1530-1532.
42. Heimbrodt W, Klar PJ, Ye S, Lampalzer M, Michel C, Baranovskii SD, Thomas P, Stolz W: Magnetic interactions in granular paramagnetic- ferromagnetic GaAs: Mn/MnAs hybrids. J Supercond 2005, 18:315-320.