Electrical spin injection from an n-type ferromagnetic semiconductor into a III-V device heterostructure

Nature Materials

Volumn 3, Issue 11, 2004, Pages 799-803

  Kioseoglou, George ^a   Hanbicki, Aubrey T ^a   Sullivan, James M ^a   Van't Erve, Olaf M J ^a   Li, C H ^a   Erwin, Steven C ^a   Mallory, Robert ^b   Yasar, Mesut ^b   Petrou, Athos ^b   Jonker, Berend T ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY AT BUFFALO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE POLARIZATION; HETEROJUNCTIONS; LIGHT EMITTING DIODES; MAGNETIZATION; NANOSTRUCTURED MATERIALS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; SUBSTRATES;

ELECTRON SPIN POLARIZATION; MAGNETIC PRECIPITATES; SPIN INJECTION;

FERROMAGNETIC MATERIALS;

FERRIC ION;

ARTICLE; MAGNETISM; SEMICONDUCTOR;

FERRIC COMPOUNDS; MAGNETICS; SEMICONDUCTORS;

EID: 8444250659     PISSN: 14761122     EISSN: None     Source Type: Journal    
DOI: 10.1038/nmat1239     Document Type: Article

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