Low-temperature atomic layer deposition of cobalt oxide thin films using dicobalt hexacarbonyl tert-butylacetylene and ozone

Electrochemical and Solid-State Letters

Volumn 15, Issue 2, 2012, Pages

  Han, Byeol ^a   Choi, Kyu Ha ^a   Park, Kwangmin ^a   Han, Won Seok ^b   Lee, Won Jun ^a  

^a Sejong University   (South Korea)

^b UP Chemical Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATING INJECTION; ATOMIC LAYER; COBALT OXIDES; DICOBALT HEXACARBONYL; DOMINANT PROCESS; GROWTH RATE SATURATION; HIGHER TEMPERATURES; LOW TEMPERATURES; OZONE OXIDATION; STEP COVERAGE;

ATOMIC LAYER DEPOSITION; COBALT COMPOUNDS; DEPOSITION; OXIDE FILMS; OZONE; OZONE LAYER; PYROLYSIS; THIN FILMS; VAPOR DEPOSITION;

COBALT;

EID: 84055222397     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.008202esl     Document Type: Article

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