Characteristics of cobalt films deposited by metal organic chemical vapor deposition method using dicobalt hexacarbonyl tert-butylacetylene

Japanese Journal of Applied Physics

Volumn 47, Issue 7 PART 1, 2008, Pages 5396-5399

  Lee, Keunwoo ^a   Park, Taeyong ^a   Lee, Jaesang ^a   Kim, Jinwoo ^a   Kim, Jeongtae ^a,b   Kwak, Nohjung ^a,b   Yeom, Seungjin ^a,b   Jeon, Hyeongtag ^a  

^a Hanyang University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

CCTBA precursor; Cobalt disilicide; Metal organic chemical vapor deposition; Step coverage

Indexed keywords

ANNEALING; ASPECT RATIO; ATOMIC SPECTROSCOPY; AUGER ELECTRON SPECTROSCOPY; CARBON FILMS; COBALT; INDUSTRIAL CHEMICALS; METALLIC FILMS; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; OXYGEN; PHASE TRANSITIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SILICON; SILICON WAFERS; TRANSITION METALS; VAPORS; X RAY ANALYSIS;

ATOMIC RATIOS; CCTBA PRECURSOR; CO FILMS; CO PRECURSORS; COBALT DISILICIDE; COBALT FILMS; CONFORMALITY; DICOBALT HEXACARBONYL; IMPURITY CONTENTS; METAL ORGANIC; METAL ORGANIC CHEMICAL VAPOR DEPOSITION; OXYGEN CONTENTS; PATTERNED WAFERS; REACTANT GASSES; RTA TEMPERATURES; STEP COVERAGE; SUBSTRATE TEMPERATURES; X-RAY DIFFRACTIONS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 55149092775     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.5396     Document Type: Article

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